n–p transformation in TlBi(1−x)SbxTe2 system

Paraskevopoulos, K.; Hatzikraniotis, E.; Vinga, E. S.; Özer, Mehmet; Anagnostopoulos, A. N.; Polychroniadis, E.K.

doi:10.1016/j.jallcom.2007.12.029

Cited by 6 publications

(4 citation statements)

References 19 publications

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“…1,[7][8][9] Different crystals belong to the interesting group A III B V X 2 VI of layer and chain semiconductors, which have attracted the attention of researchers due to their special structural, electrical and thermo-electrical properties. [10][11][12][13][14][15][16][17][18] Many amorphous semiconductors especially chalcogenide glasses exhibit an abrupt change in electrical resistivity when subjected to an adequately high electric field. In recent years, it has been observed that the switching effect is not only characteristic of these kind of materials but is also present in many crystalline materials, like binary semiconductor and ternary chalcogenide semiconductor compounds such as TlGaTe 2 , TlInSe 2 , TlInTe 2 and InGaSe 2 .…”

Section: Introductionmentioning

confidence: 99%

Electrical and Switching Properties of TlBiSe2 Chalcogenide Compounds

Kalkan

Baş

2015

Journal of Elec Materi

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The electrical conductivity of TlBiSe 2 narrow gap semiconductors prepared by the Bridgman-Stockbarger method was investigated. The temperature dependence of the electrical conductivity was measured to establish the dominant conductivity mechanism in a temperature range between 293 K and 373 K. The conduction activation energy has a single value indicating the existence of one type of conduction mechanism in the investigated temperature range. The electrical conductivity of the sample is controlled by a thermally activated mechanism. It was also found that these samples exhibit a current-controlled negative resistance and threshold switching. The value of the threshold voltage decreases exponentially with increasing temperature. The calculated ratio of the threshold energy to the activation energy is one half, and is derived from the electro-thermal model for the switching process. Therefore, the electrical switching in the investigated samples can be explained in terms of the electro-thermal model. A possible conduction mechanism in the pre-switching state of the sample associated with the space charge limited current is described.

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Section: Introductionmentioning

confidence: 99%

Electrical and Switching Properties of TlBiSe2 Chalcogenide Compounds

Kalkan

Baş

2015

Journal of Elec Materi

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“…This relation between rhombohedral and FCC lattices is analogous to the type II antiferromagnet NiO with M = Ni spin up, M ′ = Ni spin down, and X = O. In this sense, Tl-based III-V-VI 2 ternary chalcogenides constitute an offshoot of the IV-VI semiconductors and can be called pseudo IV-VI semiconductors [17][18][19][20][21][22]. Taking the example of TlBiTe 2 , because Tl and Bi precede and follow Pb in the periodic table, TlBiTe 2 resembles PbTe where M = M ′ = Pb.…”

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Single-Dirac-Cone Topological Surface States in theTlBiSe2Class of Topological Semiconductors

et al. 2010

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We have investigated several strong spin-orbit coupling ternary chalcogenides related to the (Pb,Sn)Te series of compounds. Our first-principles calculations predict the low temperature rhombohedral ordered phase in TlBiTe2, TlBiSe2, and TlSbX2 (X=Te, Se, S) to be topologically Z2 = -1 nontrivial. We identify the specific surface termination that realizes the single Dirac cone through first-principles surface state computations. This termination minimizes effects of dangling bonds making it favorable for photoemission (ARPES) experiments. Our analysis predicts that thin films of these materials would harbor novel 2D quantum spin Hall states, and support odd-parity topological superconductivity. For a related work also see arXiv:1003.2615v1. Experimental ARPES results will be published elsewhere. PACS numbers:Topological insulators are a recently discovered new phase of quantum matter [1][2][3]. The search for topological insulators in real materials has benefitted from the fruitful interplay between topological band theory of Kane and Mele (2005) and realistic band structure calculations [4][5][6][7][8][9][10][11][12]. As a result, Bi x Sb 1−x , Bi 2 Se 3 and Bi 2 Te 3 have been experimentally realized as three-dimensional topological insulators [6-9, 11, 12]. Recently, this search has been extended to ternary compounds [13,14]. Here, we report first-principles band calculations of Tl-based III-V-VI 2 ternary chalcogenide series, and compare the results to those of the related (Pb,Sn)Te series studied previously in connection with Dirac fermion physics in the 1980s [15]. The low temperature rhombohedral ordered phase in TlBiTe 2 , TlBiSe 2 , and TlSbX 2 (X=Te, Se, S) is predicted to be topologically nontrivial. Moreover, we have carried out first-principles slab computations in order to identify the specific surface termination which gives rise to the simple Dirac-cone surface band for ARPES measurements. An analysis of the symmetry of states indicates that thin films of the present materials would support 2D-quantum spin Hall states.Designing new topological insulators involves modifying atomic structure or doping to shift band orders out of the natural sequence. Consider, for example, the wellknown case of (Pb,Sn)Te with rocksalt structure. The end phase PbTe with face-centered cubic (FCC) lattice is topologically trivial. In contrast, SnTe has band inversions at four equivalent L-points where parities of conduction and valence bands are switched (Fig. 2E). Since this inversion occurs at an even number of points in the Brillouin zone, SnTe is also a topologically trivial band insulator. Fu and Kane [5] proposed that a rhombohedral distortion along a particular 111 direction can induce (Pb,Sn)Te into a strong topological phase because then the band inversion occurs only at the L-point along the 111 direction which is distinguished from the other three L-points (Fig. 1B).The Tl-based III-V-VI 2 ternary chalcogenides M M ′ X 2 are, or can be, approximately viewed as a rhombohedral structure with space group R3m[...

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“…(2) if γ P = γ 0 . Recently, the extended Drude model has been employed for the analysis of IR reflectivity in Tl(Bi x Sb 1−x )Te 2 compounds [12]. The expression in Eq.…”

Section: Resultsmentioning

confidence: 99%

Models for the Analysis of IR Reflectivity in TlBiTe₂with Different Size of Twins

Hatzikraniotis

2012

Acta Phys. Pol. A

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In this work TlBiTe 2 were grown by a modified Bridgman technique and examined samples had different lateral dimensions of twins, ranging from 0.1 µm to 1 µm. The average lateral size of the twins seems to affect free carrier concentration and plasma frequency. Infrared spectra were analyzed by two models, the extended Drude model and a generalized empirical model of frequency-dependent damping factor. Increase in size of twins affects the electronic properties and hence plasma reflectivity and free carrier concentration of TlBiTe 2 .

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n–p transformation in TlBi(1−x)SbxTe2 system

Cited by 6 publications

References 19 publications

Electrical and Switching Properties of TlBiSe2 Chalcogenide Compounds

Electrical and Switching Properties of TlBiSe2 Chalcogenide Compounds

Single-Dirac-Cone Topological Surface States in theTlBiSe2Class of Topological Semiconductors

Models for the Analysis of IR Reflectivity in TlBiTe₂with Different Size of Twins

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n–p transformation in TlBi(1−x)SbxTe2 system

Cited by 6 publications

References 19 publications

Electrical and Switching Properties of TlBiSe2 Chalcogenide Compounds

Electrical and Switching Properties of TlBiSe2 Chalcogenide Compounds

Single-Dirac-Cone Topological Surface States in theTlBiSe2Class of Topological Semiconductors

Models for the Analysis of IR Reflectivity in TlBiTe2with Different Size of Twins

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Models for the Analysis of IR Reflectivity in TlBiTe₂with Different Size of Twins