N- and p-type doping of transition-metal dichalcogenides by Ar plasma treatment and its application in CMOS

Plasma Processing and Treatment of 2D Transition Metal Dichalcogenides: Tuning Properties and Defect Engineering

“…While sulfur vacancies act as n-type dopants in TMDs, prolonged plasma treatment may induce abnormal p-doping in TMDs such as WSe 2 and MoTe 2 . This is because excessive chalcogen vacancies and edge defects created by the plasma are susceptible to be filled by oxygen in air, resulting in p-type doping . n-Doping by plasma is also reported to elevate the Fermi level and decrease the work function. − In contrast, metal vacancies in chalcogen-rich TMDs lead to p-doped TMDs.…”

Large‐Scale N‐Type FET and Homogeneous CMOS Inverter Array Based on Few‐Layer MoTe2

“…[23][24][25][26] In contrast, the CVD-grown MoTe 2 usually presents p-type characteristics due to the air molecule adsorption. [27] Over the years, several attempts about realizing n-doping of MoTe 2 were reported, such as chemical doping, [28] electrothermal doping, [27] Ar plasma treatment doping, [29] and atomic layer deposition (ALD) of Al 2 O 3 induced doping. [9,10] Among these methods, the ALD induced doping was more controllable and facile.…”

“…[9,10] Among these methods, the ALD induced doping was more controllable and facile. [9,10,[27][28][29] Notably, in all these works, the gate dielectric layer fabrication and the n-doping process were separate. Besides, compared to Al 2 O 3 , HfO 2 has higher k value and can guarantee better gate control capability.…”

“…So far, all the reported n-doped MoTe 2 FETs and TMDCs-based homogeneous CMOS inverters are single device, [9,10,19,[27][28][29][31][32][33] which limits their practical application in large-scale integrated circuit. Besides, all the reported TMDCs-based CMOS inverters (including homogeneous and heterogeneous ones) involve the transfer process.…”

“…Besides, all the reported TMDCs-based CMOS inverters (including homogeneous and heterogeneous ones) involve the transfer process. [8][9][10][11][19][20][21][22][27][28][29][31][32][33] Therefore, developing largescale fabrication method that is reliable and compatible with traditional silicon technology is indispensable.…”