MWIR InAsSb XBn detectors for high operating temperatures

Klipstein, P. C.; Klin, O.; Grossman, Steve; Snapi, N.; Yaakobovitz, Barak; Brumer, Maya; Lukomsky, Inna; Aronov, D. A.; Yassen, Michael; Yofis, Boris; Glozman, A.; Fishman, Tal; Berkowitz, Eyal; Magen, Osnat; Shtrichman, I.; Weiss, Eliezer

doi:10.1117/12.849503

Cited by 31 publications

(22 citation statements)

References 9 publications

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“…The experimental results are presented for structure with AL's doping of N D = 4 × 10 16 cm −3 and thickness of 1.5 µm The proper agreement between theoretical prediction and experimental results are obtained (Klipstein et al 2011). The maxiumu R i is reached for λ = 3.3 µm while 50 % cut off wavelength (λ c ) is found to be 4.2 µm at T = 300 K (see Fig.…”

Section: Quantum Efficiency and Responsivitysupporting

confidence: 54%

“…1a, b). The detailed description of the growth procedure and device's characterization could be found in the papers by (Klipstein et al 2011) and (Weiss et al 2012). The noise current is calculated using the expression including thermal Johnson-Nyquist noise and electrical shot noise:…”

Section: Simulation Proceduresmentioning

confidence: 99%

“…Although theoretical prediction places T2SLs in front of the IR systems' development, the better stability over large area, higher carrier mobility and developed technology favours InAsSb in MWIR range (Vincent et al 1990;Klipstein et al 2011;Plis et al 2011;Weiss et al 2012).…”

Section: Introductionmentioning

confidence: 99%

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Performance limits of the mid-wave InAsSb/AlAsSb nBn HOT infrared detector

Martyniuk

Rogalski

2013

Opt Quant Electron

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InAsSb ternary alloy is considered to be an alternative to HgCdTe (MCT) in mid-wavelength infrared spectral region. The high operation temperature conditions are successfully reached with A III B V bariodes, where InAsSb/AlAsSb system is playing dominant role. Since there is no depletion region in the active layer, the generation-recombination and trap-assisted tunneling mechanisms are suppressed leading to lower dark currents in comparison with standard photodiodes. As a consequence, the bariodes operate at a higher temperature than standard photodiodes which could be used in wide range of system applications, especially where the size, weight, and power consumption are crucial. The paper presents detailed analysis of the bariode's performance (such as dark and photocurrent, differential resistance area product, and detectivity) versus applied voltage, operating temperatures and structural parameters. The optimal working conditions are calculated. The theoretical predictions of bariode's performance are compared with experimental data published in the literature. Finally, the nBn InAsSb/AlAsSb performance is compared to the MCT "Rule 07".

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Section: Quantum Efficiency and Responsivitysupporting

confidence: 54%

Section: Simulation Proceduresmentioning

confidence: 99%

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Performance limits of the mid-wave InAsSb/AlAsSb nBn HOT infrared detector

Martyniuk

Rogalski

2013

Opt Quant Electron

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“…It can be fitted to the standard dependence for Diffusion limited behaviour of the form J ∝ T 3 exp(-∆E/kT), yielding an activation energy of ∆E~336 meV. It was shown that a correction of 36 meV must be subtracted in order to take into account the dependence of the bandgap on temperature and thereby deduce the bandgap energy 10,14,15 at 150 K. This procedure yields ∆E (150 K) ~ 300 meV, which corresponds very well to the expected bandgap energy of 302 meV (bandgap wavelength ~ 4.1 µm) for lattice matched InAs 1-x Sb x 15 . The diffusion current can be used to deduce a value of ~700 ns for the minority carrier lifetime, and a value of ~ 50 µm for the bulk diffusion length 10,14,15 .…”

Section: Performance Of Xb N N Inassb Bariode Fpamentioning

confidence: 99%

Status of Cooled and Uncooled Infrared Detectors at SCD, Israel

Klipstein

Mizrahi

Fraenkel

et al. 2013

DSJ

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For the highest end mid-wave-infrared applications, SCD, France offers a family of cryogenically cooled detectors with background limited performance (BLIP). The matured InSb planar technology is implemented in a variety of focal plane arrays, from a 320 x 256 format with a 30 µm pitch to a 1280 x 1024 format with a 15 µm pitch, all of which are operated at 77K. A major challenge is to reduce the cooling requirements. Then substantial reductions in size, weight, and power (SWaP) can be achieved by using a smaller cooler and Dewar assembly. SCD's new epi-InSb detectors, grown by molecular beam epitaxy, have a BLIP temperature of ~100 K at F/3. This enhanced operating temperature reduces the required cooling power by ~20 % compared with the conventional 77 K operation. For a very high operating temperature, we have developed the new XBn-InAsSb detector with a 4.2 µm cut-off wavelength. This detector exhibits a BLIP temperature of ~160K at F/3 and a reduction in cooling power of ~60 %. These HOT detectors enable an improved range of solutions, including faster cool-down time and mission readiness, longer mission times, and higher cooler reliability. We can also exploit their reduced dark current to obtain an enhanced signal to noise ratio at lower operating temperatures.The well-established 25 µm pitch family of uncooled µ-Bolometer detectors has two basic formats, 384 x 288 and 640 x 480, and several sensitivity grades. The very high sensitivity 25 µm pitch detector has been demonstrated at F/2.4 for mid-range systems. The wide-band detector is optimized for both the long-wave-infrared and mid-waveinfrared spectral bands. Recently we developed the new 17 µm pitch family of detectors. The 640 x 480 format is a leading candidate for applications such as thermal weapon sights, driver vision enhancers and other mid-range IR systems. The 17 µm family is currently being expanded with the high sensitivity grade and with the addition of two new formats: the compact 384 x 288 for low SWaP applications, and the large 1024 x 768 format for applications requiring high resolution and a wide field of view.

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“…Significant improvements have been achieved by reducing the absorber volume using optical immersion, 4 doubleor multiple-pass IR radiation, 4 suppression of Auger thermal generation in nonequilibrium photoconductors, 13,14 photodiodes, [15][16][17][18] magnetoconcentration effect detectors, 19,20 and recent barrier detectors. [21][22][23][24] Nonequilibrium devices require significant bias current and exhibit excessive low-frequency noise that extends up to the MHz range. This noise, which reduces detectivity, as well as high current requirements represent severe obstacles to their widespread application.…”

Section: Introductionmentioning

confidence: 99%

Optimization of a HOT LWIR HgCdTe Photodiode for Fast Response and High Detectivity in Zero-Bias Operation Mode

Kopytko

Kębłowski

Madejczyk

et al. 2017

Journal of Elec Materi

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Fast response is an important property of infrared detectors for many applications. Currently, high-temperature long-wavelength infrared HgCdTe heterostructure photodiodes exhibit subnanosecond time constants while operating under reverse bias. However, nonequilibrium devices exhibit excessive low-frequency 1/f noise that extends up to MHz range, representing a severe obstacle to their widespread application. Present efforts are focused on zero-bias operation of photodiodes. Unfortunately, the time constant of unbiased photodiodes is still at the level of several nanoseconds. We present herein a theoretical investigation of device design for improved response time and detectivity of long-wavelength infrared HgCdTe photodiodes operating at 230 K in zero-bias mode. The calculation results show that highly doped p-type HgCdTe is the absorber material of choice for fast photodiodes due to its high electron diffusion coefficient. The detectivity of such a device can also be optimized by using absorber doping of N A = 1 9 10 17 cm À3 . Reduction of the thickness is yet another approach to improve the device response. Time constant below 1 ns is achieved for an unbiased photodiode with absorber thickness below 4 lm. A tradeoff between the contradictory requirements of achieving high detectivity and fast response time is expected in an optically immersed photodiode with very small active area.

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MWIR InAsSb XBn detectors for high operating temperatures

Cited by 31 publications

References 9 publications

Performance limits of the mid-wave InAsSb/AlAsSb nBn HOT infrared detector

Performance limits of the mid-wave InAsSb/AlAsSb nBn HOT infrared detector

Status of Cooled and Uncooled Infrared Detectors at SCD, Israel

Optimization of a HOT LWIR HgCdTe Photodiode for Fast Response and High Detectivity in Zero-Bias Operation Mode

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