MWIR InAsSb barrier detector data and analysis

D'Souza, Arvind I.; Robinson, E.; Ionescu, A; Okerlund, D.; Lyon, T. J. de; Rajavel, R. D.; Sharifi, Hasan; Dhar, Nibir K.; Wijewarnasuriya, P. S.; Grein, C. H.

doi:10.1117/12.2018427

Cited by 14 publications

(9 citation statements)

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“…41 Utilization of InAsSb absorber on GaAs substrates instead of HgCdTe absorber enables fabrication of MWIR low-cost, large-format HOT FPAs. Souza and co-workers [42][43][44] The measured dark current density in the pyramidal structured diodes is reduced by a factor of 3 in comparison with conventional diodes with the bulk absorber, which is consistent with volume reduction due to the creation of the absorber topology. High detectivity (>10 10 cmHz 1/2 /W) and high internal quantum efficiency (>90%) have been achieved over the entire 0.5 lm to 5.0 lm spectral range.…”

Section: Photon Trapping Detectorssupporting

confidence: 69%

“…Photon trapping detectors have been demonstrated independently in II-VI 38,39,41 and III-V [41][42][43][44] based epitaxial materials. Sub-wavelength in size semiconductor pillar arrays within a single detector have been designed and structured as an ensemble of 3D photonic structure units using either a top-down or bottom-up process scheme to significantly increase absorption and quantum efficiency.…”

Section: Photon Trapping Detectorsmentioning

confidence: 99%

“…Figure 31 shows an example of such an nBn structure that was considered theoretically by Martyniuk and Rogalski, 72 along with the I-V characteristics as a function of temperature that were taken from Ref. 44. The alloy composition of x ¼ 0.09 for the InAs 1Àx Sb x absorber layer provided a cutoff wavelength of $4.9 lm at 150 K. J dark was 10 À3 A/cm 2 at 200 K and 3 Â 10 À6 A/cm 2 at 150 K. The detectors are dominated by diffusion currents at À1.0 V bias where the quantum efficiency peaks.…”

Section: B Mwir Inassb Barrier Detectorsmentioning

confidence: 99%

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New concepts in infrared photodetector designs

Martyniuk

Antoszewski

Martyniuk

et al. 2014

Applied Physics Reviews

234

134

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Section: Photon Trapping Detectorssupporting

confidence: 69%

Section: Photon Trapping Detectorsmentioning

confidence: 99%

Section: B Mwir Inassb Barrier Detectorsmentioning

confidence: 99%

See 1 more Smart Citation

New concepts in infrared photodetector designs

Martyniuk

Antoszewski

Martyniuk

et al. 2014

Applied Physics Reviews

234

134

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“…Figure 9 shows an example of the similar nBn structure considered theoretically by Martyniuk and Rogalski [28] and the I−V characteristics as a function of temperature taken from Ref. 29. The alloy composition of x = 0.195 for the InAs 1-x Sb x absorber layer provided a cutoff wavelength 4.9 μm at 150 K. J dark is 1.0×10 -3 A/cm 2 at 200 K and 3.0×10 -6 A/cm 2 at 150 K. The detectors are dominated by diffusion currents at -1.0 V bias where the quantum effi− ciency peaks.…”

Section: Mwir Inassb Barrier Detectorsmentioning

confidence: 99%

Barrier infrared detectors

Martyniuk

Kopytko

Rogalski

2014

Opto-Electronics Review

105

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In 1959, Lawson and co-workers publication triggered development of variable band gap Hg1−xCdxTe (HgCdTe) alloys providing an unprecedented degree of freedom in infrared detector design. Over the five decades, this material system has successfully fought off major challenges from different material systems, but despite that it has more competitors today than ever before. It is interesting however, that none of these competitors can compete in terms of fundamental properties. They may promise to be more manufacturable, but never to provide higher performance or, with the exception of thermal detectors, to operate at higher temperatures.In the last two decades a several new concepts of photodetectors to improve their performance have been proposed including trapping detectors, barrier detectors, unipolar barrier photodiodes, and multistage detectors. This paper describes the present status of infrared barrier detectors. It is especially addressed to the group of III-V compounds including type-II superlattice materials, although HgCdTe barrier detectors are also included. It seems to be clear that certain of these solutions have merged as a real competitions of HgCdTe photodetectors.

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“…The alloy compositions of x = 0.09 to 0.2 for the InAs1-xSbx absorber layers provided the λcut-off wavelengths of ~4.1 to ~5.0 μm at 150 K, respectively. The current-voltage characteristics were taken from [155]. The dark current density for nBn InAs0.805Sb0.195 structure was 1.0 × 10 −3 A/cm 2 at 200 K and 3.0 × 10 −6 A/cm 2 at 150 K. In nBn InAsSb detector, the depletion current is totally suppressed (see Figure 47c) because there is no depletion region.…”

Section: Barrier Detectorsmentioning

confidence: 99%

InAsSb-Based Infrared Photodetectors: Thirty Years Later On

Rogalski

Martyniuk

Kopytko

et al. 2020

Sensors

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In 1989, one author of this paper (A.R.) published the very first review paper on InAsSb infrared detectors. During the last thirty years, many scientific breakthroughs and technological advances for InAsSb-based photodetectors have been made. Progress in advanced epitaxial methods contributed considerably to the InAsSb improvement. Current efforts are directed towards the photodetector’s cut-off wavelength extension beyond lattice-available and lattice-strained binary substrates. It is suspected that further improvement of metamorphic buffers for epitaxial layers will lead to lower-cost InAsSb-based focal plane arrays on large-area alternative substrates like GaAs and silicon. Most photodetector reports in the last decade are devoted to the heterostructure and barrier architectures operating in high operating temperature conditions. In the paper, at first InAsSb growth methods are briefly described. Next, the fundamental material properties are reviewed, stressing electrical and optical aspects limiting the photodetector performance. The last part of the paper highlights new ideas in design of InAsSb-based bulk and superlattice infrared detectors and focal plane arrays. Their performance is compared with the state-of-the-art infrared detector technologies.

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MWIR InAsSb barrier detector data and analysis

Cited by 14 publications

References 0 publications

New concepts in infrared photodetector designs

New concepts in infrared photodetector designs

Barrier infrared detectors

InAsSb-Based Infrared Photodetectors: Thirty Years Later On

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