Multiwalled carbon nanotubes as ultrasensitive electrometers

Roschier, Leif; Tarkiainen, Reeta; Ahlskog, M.; Paalanen, M. A.; Hakonen, Pertti

doi:10.1063/1.1362281

Cited by 41 publications

(24 citation statements)

References 21 publications

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“…The electrometer can be implemented either by a single electron transistor (SET), as in the original experiments, [2] or by a highly sensitive field effect transistor (FET) [3]. Many kinds of electrometers have been implemented so far, that involve metallic [2], semiconducting [5] and more recently single walled [6,7] or multi walled [8] carbon nanotube as the active channel.…”

Section: Introductionmentioning

confidence: 99%

Self‐Assembly of Carbon‐Nanotube‐Based Single‐Electron Memories

Marty

Bonnot

Bonhomme

et al. 2005

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We demonstrate the wafer-scale integration of single electron memories based on carbon nanotube field effect transistors (CNFETs) using a process based entirely on self assembly. First, a "dry" self assembly step based on chemical vapor deposition (CVD) allows the growth and connection of CNFETs. Next, a "wet" self-assembly step is used to attach a single 30 nmdiameter gold bead in the nanotube vicinity via chemical functionalization. The bead is used as the memory storage node while the CNFET operated in the subthreshold regime acts as an electrometer exhibiting exponential gain. Below 60 K, the transfer characteristics of goldCNFETs show highly reproducible hysteretic steps. Evaluation of the capacitance confirms that these current steps originate from the controlled storage of single electrons with a retention time that exceeds 550 s at 4 K.

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Section: Introductionmentioning

confidence: 99%

Self‐Assembly of Carbon‐Nanotube‐Based Single‐Electron Memories

Marty

Bonnot

Bonhomme

et al. 2005

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“…[1][2][3][4][5] The inherent noise of such devices is important yet few studies have addressed noise issues, [6][7][8][9] and these have mainly focused on nanotubes in an "open-to-air" nonpassivated configuration. Here we report on electrical current fluctuations in passivated coaxial p-and n-type single-wall carbon nanotube ͑SWCNT͒ field-effect transistors ͑FETs͒.…”

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confidence: 99%

Room-temperature single charge sensitivity in carbon nanotube field-effect transistors

Peng

Hughes

Golovchenko

2006

Applied Physics Letters

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Electrical current fluctuation studies are reported for coaxial p-type and n-type single-wall carbon nanotube field-effect transistors (FETs). Abrupt discrete switching of the source-drain current is observed at room temperature. The authors attribute these random telegraph signals to charge fluctuating electron traps near the FET conduction channels. Evolution of the current-switching behavior associated with the occupancy of individual electron traps is demonstrated and analyzed statistically. The result strongly indicates room temperature single charge sensitivity in carbon nanotube FETs, which may offer potential applications for single molecule sensors based on suitably prepared FET devices.

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“…While the current fluctuation generated by each trapping-detrapping centre takes the form of random telegraph signal (Liu et al, 2005), the superposition of such RTS noises with a wide distribution of switching time constants yields the 1/f -noise spectrum. A RTS appears at a smaller absolute gate bias for a larger absolute drain-source bias in a CNT transistor (Roschier et al, 2001). The noise mechanism is attributed to a defect located in the drain side of the Schottky barrier CNT transistor with Ti/Au as contact material.…”

Section: Investigation Of Influence Of Contact Interfacesmentioning

confidence: 99%

“…The contribution of the current fluctuations is mainly due to mobility modulation, and the large amplitude of the RTSs is analyzed to be due to the small diameters of the SWNTs. The only known way to reduce 1 f  -noise is achieved by using a free standing CNT as an island (Roschier et al, 2001). Tobias and coauthors used Hooge's relation simply as an empirical rule for characterizing the magnitude of the noise by a single (temperature dependent) parameter () T  (Tobias et al, 2008).…”

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confidence: 99%