Multipurpose Quantum Simulator Based on a Hybrid Solid-State Quantum Device

Yuan, Tingting; Zhou, Fang; Chen, Shengping; Xiang, Shao-Hua; Song, Kehui; Zhao, Yujing

doi:10.3390/sym11040467

Cited by 4 publications

(3 citation statements)

References 49 publications

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“…Fortunately, the successful fabrication of III-VI layer semiconductors has been achieved [47][48][49][50][51]. The predominant techniques used to acquire superior, purer materials include mechanical stripping [52][53][54], epitaxial growth [55][56][57][58], chemical vapor deposition (CVD) [59,60], and liquid phase stripping [61].…”

Section: Introductionmentioning

confidence: 99%

Thickness Nanoarchitectonics with Edge-Enhanced Raman, Polarization Raman, Optoelectronic Properties of GaS Nanosheets Devices

Zhou,

Zhao,

et al. 2023

Crystals

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Here, we report on using chemical vapor deposition to generate three kinds of gallium sulfide nanosheets, with thicknesses of approximately 10, 40, and 170 nm. Next, we performed Raman imaging analysis on these nanosheets to evaluate their properties. The 10 nm GaS nanosheets exhibited a nearly equal distribution of Raman imaging intensity, whereas the 40 and 170 nm GaS nanosheets exhibited an inclination toward the edges with higher Raman intensity. When the polarization of the laser was changed, the intensity of Raman imaging of the 10 nm thick GaS nanosheets remained consistent when illuminated with a 532 nm laser. Notably, a greater Raman intensity was discernible at the edges of the 40 and 170 nm GaS nanosheets. Three distinct GaS nanosheet devices with different film thicknesses were fabricated, and their photocurrents were recorded. The devices were exposed to light of 455 nm wavelength. The GaS nanosheet devices with film thicknesses of 40 and 170 nm exhibited a positive photoresponse even though the photocurrents were fairly low. In contrast, the GaS nanosheet device with a film thickness of 10 nm had a considerable current without light, even though it had a weak reaction to light. This study reveals the different spatial patterns of Raman imaging with GaS thickness, the wavelength of excitation light, and polarization. Remarkably, the I-V diagram revealed a higher dark-field current of 800 nA in the device with a GaS nanosheet thickness of approximately 10 nm, when using a voltage of 1.5 V and a laser of 445 nm wavelength. These findings are comparable with those theretical pretictions in the existing literature. In conclusion, the observation above could serve as a catalyst for future exploration into photocatalysis, electrochemical hydrogen production through water splitting, energy storage, nonlinear optics, gas sensing, and ultraviolet selective photodetectors of GaS nanosheet-based photodetectors.

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Section: Introductionmentioning

confidence: 99%

Thickness Nanoarchitectonics with Edge-Enhanced Raman, Polarization Raman, Optoelectronic Properties of GaS Nanosheets Devices

Zhou,

Zhao,

et al. 2023

Crystals

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“…The conversion efficiency of Bi 2 Te 3 is low, but low power applications are gradually gaining the attention of researchers [21][22][23][24][25][26][27][28]. Currently, a wide range of demands have been developed for low-power generation and cooling technologies, the applications of which primarily operate in room-or low-temperature environments, such as micro-motor power systems, IoT wireless sensing modules, and wearable intelligent samples [29][30][31][32][33][34][35][36][37].…”

Section: Introductionmentioning

confidence: 99%

Green Synthesis and Morphological Evolution for Bi2Te3 Nanosystems via a PVP-Assisted Hydrothermal Method

Zhou,

Zhao

et al. 2023

Nanomaterials

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Bi2Te3 has been extensively used because of its excellent thermoelectric properties at room temperature. Here, 230–420 nm of Bi2Te3 hexagonal nanosheets has been successfully synthesized via a “green” method by using ethylene glycol solution and applying polyvinyl pyrrolidone (PVP) as a surfactant. In addition, factors influencing morphological evolution are discussed in detail in this study. Among these parameters, the reaction temperature, molar mass of NaOH, different surfactants, and reaction duration are considered as the most essential. The results show that the existence of PVP is vital to the formation of a plate-like morphology. The reaction temperature and alkaline surroundings played essential roles in the formation of Bi2Te3 single crystals. By spark plasma sintering, the Bi2Te3 hexagonal nanosheets were hot pressed into solid-state samples. We also studied the transport properties of solid-state samples. The electrical conductivity σ was 18.5 × 103 Sm−1 to 28.69 × 103 Sm−1, and the Seebeck coefficient S was −90.4 to −113.3 µVK−1 over a temperature range of 300–550 K. In conclusion, the observation above could serve as a catalyst for future exploration into photocatalysis, solar cells, nonlinear optics, thermoelectric generators, and ultraviolet selective photodetectors of Bi2Te3 nanosheet-based photodetectors.

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“…Besides the photon system, people have paid attention to the NV center in diamond, and the NV center is one of the most proper candidates in QIP. The NV center has many excellent advantages, such as having a long decoherence time even at room temperature [14], near unity quantum efficiency [15][16][17][18], fast microwave manipulation as well as narrow-band optical transitions [19]. Because NV centers are isolated from each other, people have worked to combine the NV centers with other systems [20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

High-Fidelity Hyperentangled Cluster States of Two-Photon Systems and Their Applications

et al. 2019

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An efficient scheme is proposed in this study to prepare four symmetric hyperentangled cluster states in the polarization degrees of freedom (DOF) and spatial DOF with a two-photon system. This system consists of two nitrogen-vacancy (NV) centers which are coupled to two microtoroidal resonators. The two-photon polarization-spatial hyperentangled cluster states can be generated with our system by virtue of the input and output process. Compared with previous works, our quantum circuit for preparing the hyperentangled cluster states is simple and economic. Moreover, our scheme works deterministically and does not need any extra qubits, making it applicable to existing technologies. Our calculations show that our scheme has high fidelity with current technology, which can help hyperentangled cluster states to play a very useful role in quantum communication networks with long distances and high capacity.

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Multipurpose Quantum Simulator Based on a Hybrid Solid-State Quantum Device

Cited by 4 publications

References 49 publications

Thickness Nanoarchitectonics with Edge-Enhanced Raman, Polarization Raman, Optoelectronic Properties of GaS Nanosheets Devices

Thickness Nanoarchitectonics with Edge-Enhanced Raman, Polarization Raman, Optoelectronic Properties of GaS Nanosheets Devices

Green Synthesis and Morphological Evolution for Bi2Te3 Nanosystems via a PVP-Assisted Hydrothermal Method

High-Fidelity Hyperentangled Cluster States of Two-Photon Systems and Their Applications

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