Multiplexing photonic devices integrated on a silicon/germanium platform for mid-infrared gas sensing

Labeye, P.; Koshkinbayeva, Ainur; Dupoy, Mathieu; Barritault, Pierre; Lartigue, Olivier; Fournier, Maryse; Fédéli, Jean-Marc; Garcia, Stephanie; Nicoletti, S.; Duraffourg, Laurent

doi:10.1109/cleoe-eqec.2017.8087156

Cited by 2 publications

(1 citation statement)

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“…However, the Y-junction duplexer tree has inherently high loss [6], and integration on the native substrate precludes incorporating multiple gain materials on the same chip. One example of an integrated approach used an array of QCLs on InP coupled to an arrayed waveguide grating (AWG) on silicon germanium (SiGe) [7,11,12], though separate chips were necessary [13]. An attractive alternative is to integrate QCLs on silicon (Si), which will allow the existing low-loss and large-scale fabrication infrastructure to be leveraged in the design of complex photonic integrated circuits (PICs) [14,15].…”

Section: Introductionmentioning

confidence: 99%

Multi-Spectral Quantum Cascade Lasers on Silicon With Integrated Multiplexers

et al. 2019

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Multi-spectral midwave-infrared (mid-IR) lasers are demonstrated by directly bonding quantum cascade epitaxial gain layers to silicon-on-insulator (SOI) waveguides with arrayed waveguide grating (AWG) multiplexers. Arrays of distributed feedback (DFB) and distributed Bragg-reflection (DBR) quantum cascade lasers (QCLs) emitting at ∼4.7 µm wavelength are coupled to AWGs on the same chip. Low-loss spectral beam combining allows for brightness scaling by coupling the light generated by multiple input QCLs into the fundamental mode of a single output waveguide. Promising results are demonstrated and further improvements are in progress. This device can lead to compact and sensitive chemical detection systems using absorption spectroscopy across a broad spectral range in the mid-IR as well as a high-brightness multi-spectral source for power scaling.

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