Multiplexing implementation of rubbing-induced site-selective growth of MoS2 feature arrays

Abstract

Two-dimensional layered transition-metal dichalcogenides have drawn enormous interest because of their desired electrical and mechanical properties for making various devices with attractive functions. However, the device fabrication process typically introduces lithography-induced contamination and damage to such fragile and sensitive atomically layered materials. Here, we present a multiplexing lithography process system capable of directly generating few-layer molybdenum disulfide (MoS2) feature arrays with no need of additional lithographic or etching steps. This process combines a site-selective growth scheme based on mechanically generated triboelectric charge patterns and programmable actuation of rubbing templates bearing 2D feature arrays. To achieve a good processing uniformity, we have systematically investigated the effects of implementation of an air cushion on the rubbing template, various interfacing layers on the rubbing features, as well as mechanical load on rubbing templates and substrates. Using this process, we have demonstrated the growth of “L” shaped few-layer MoS2 arrays on SiO2/Si substrates with a good yield.

Bi2Se3-Based Memristive Devices for Neuromorphic Processing of Analogue Video Signals

“…Other details about the RISS method are included in the Materials and Methods. In addition, we previously presented the works about using RISS processes for producing few-layer MoS 2 device features as well as systematical studies on the effects of various processing parameters on the morphological and electronic properties of resultant layered semiconductors. , Especially, we have systematically studied the retention time of the triboelectric charge patterns, which can last for at least hours. The resolution of the RISS process is about 300 nm, which is limited by the spatial contrast of the electric field induced by the triboelectric charge patterns.…”

“…Figure 1 schematically illustrates the multiplexing rubbinginduced site-selective growth (RISS) process for producing an array of Bi 2 Se 3 device features on a target substrate. 33 The whole process involves the following critical steps. First, a SiO 2 -coated Si substrate is selectively rubbed by a Si template bearing orderly arranged Au-coated brushing pillars (Figure 1a).…”

“…The few-layer Bi 2 Se 3 pattern arrays are fabricated by using the RISS deposition method previously reported by us. , First, a SiO 2 -coated Si substrate is brought into contact with a Au-coated Si template bearing protrusive pillars using a built-in holding arm. The substrate is also mounted on a planar motion stage (X-XY-LSM025A, Zaber) and actuated following predefined paths to generate triboelectric charge patterns when the protrusive pillars on the template rub the SiO 2 surface of the substrate.…”

“…However, strong chemical solutions are needed to completely eliminate such seeding features after the growth process, which could also damage as-grown layered materials. We previously demonstrated a rubbing-induced site-selective (RISS) method capable of generating 2D MoS 2 pattern arrays on an SiO2/Si substrate with no need of additional lithography or etching processes. , Additional work must be carried out to leverage this approach for generating other layered materials and device structures.…”

“…We previously demonstrated a rubbing-induced site-selective (RISS) method capable of generating 2D MoS 2 pattern arrays on an SiO2/Si substrate with no need of additional lithography or etching processes. 33,34 Additional work must be carried out to leverage this approach for generating other layered materials and device structures.…”