Multiplexing high‐side load switch using adaptive well biasing

Abstract

A high-side load switch is presented for applications that require multiplexing the supply terminal to multiple voltage sources that are different, unknown, and/or dynamic. The design incorporates p-channel switches with adaptive n-well biasing to ensure that no junction is forward biased. Measured results are presented from a circuit that has been fabricated in a standard 0.35 μm CMOS process. The circuit is also demonstrated in an application of programming non-volatile memory.

Programming of Floating-Gate Transistors for Nonvolatile Analog Memory Array

“…Furthermore, typically injection V s is generated by a charge-pump with some ripple on it which affects programming accuracy as well. Finally, above-ground programming technique requires high-side [52] switches to switch between the higher V dd to program and the lower V dd in read mode, which increases the power consumption and die area, therefore, using below-ground injection is advantageous over above-ground injection in that it requires less overhead infrastructure, which yield to more simplified circuit with less power dissipation that is practical for large FG arrays in analog applications.…”