Multiple wavelength Fabry–Pérot lasers fabricated by vacancy-enhanced quantum well disordering

Hofstetter, Daniel; Zappe, Hans; Epler, J. E.; Riel, P.

doi:10.1063/1.114759

Cited by 29 publications

(21 citation statements)

References 8 publications

(8 reference statements)

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“…Bandgap-shified Fabry-Pêrot lasers in order to demonstrate the good laser quality of material subject to a VED anneal, we fabricated Fabry-Pérot lasers in both the shifted and the unshifted regions of annealed material, as well as in as-grown material in a process described previously [22]. The lasers were 500 urn long with a ridge width of 4 urn and were tested in bar form under CW conditions at room temperature.…”

Section: Bmentioning

confidence: 99%

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Monolithically integrated interferometer for optical displacement measurement

Hofstetter

Zappe

1996

SPIE Proceedings

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A monolithically integrated optical displacement sensor in the GaAs/AlGaAs material system has been developed, fabricated and characterized. The device was a double Michelson interferometer with an integrated light source, photodetectors, couplers and phase shifters. A key point of the work was the development of a single growth-step distributed Bragg reflector laser which served as the light source of the interferometer circuit. Special attention was also directed at the establishment of a bandgapengineering technique (vacancy-enhanced disordering) allowing the definition of absorbing areas for the pumped laser section and the photodetector and transparent areas for the waveguiding sections and the grating section of the laser. The combination of the vacancy-enhanced disordering and the laser process enabled the fabrication of a fully integrated optical Michelson interferometer with quadrature signal detection. The maximal measurement distance with this double Michelson interferometer was 25 cm, and a maximal resolution of 20 nm was seen. Although using relatively simple standard processes, complex optical functions could be realized on a single chip. ACKNOWLEDGMENFTSI would like to thank • R. Dändliker for directing this thesis and for many helpful discussions.• H.P. Zappe for supervising this work. He introduced me into the basics of cleanroom work as well as into the field of 111-V-based integrated optics. Without his patience in revising my English manuscripts, I would have managed neither to publish a paper nor to write my PhD thesis.• M.T. Gale and H.W. Lehmann, who created a productive atmosphere in their research groups. Many discussions with them and their co-workers J. Söchtig, H. Teichmann, J.E. Epier, and P. Riel were necessary to animate in me the interest for interferometry, IH-V-processing, and semiconductor laser fabrication.• K. Knop for allowing me to carrying out this PhD work at the Paul Scherrer Institute in Zurich.• H. Schütz, R. Widmer, D. Jeggle, A. Vonlanthen, H. Meier, H.P. Schweizer, R. Stutz,}. Pedersen, and H. Siegwart for their technical and PC support.• N.E de Rooij, H. Heidrich, and H.P. Zappe for their interest in this work and also for being members of the jury.• My family and my friends for their support and patience during my education.Zurich, June 19% Daniel Hofstetter -u- LIST OF PUBLICATIONSThis thesis is an overview of our work in the area of monolithically integrated optical displacement sensing using III-V-semiconductors. Appendix B contains the following reprints of our journal publications. I D. Hofstetter, H.P. Zappe, J.E. Epler and J. Söchtig, Single-growth-step GaAs/AlGaAs distributed Bragg reflector lasers with holographicallydefined recessed gratings, Electron. Lett, vol. 30, no. 22, pp. 1858Lett, vol. 30, no. 22, pp. -1859Lett, vol. 30, no. 22, pp. , 1994 Lett., vol. 67, no. 14, pp. 1978Lett., vol. 67, no. 14, pp. -1980Lett., vol. 67, no. 14, pp. ,1995

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Section: Bmentioning

confidence: 99%

“…Its working principle is based on the quantumconfined Stark effect (QCSE) [19], [21], [22]. The QCSE uses the exciton absorption peaks of the QW, which shift to smaller energy when an electric field is applied perpendicular to the substrate plane.…”

Section: Phase Shiftersmentioning

confidence: 99%

Monolithically integrated interferometer for optical displacement measurement

Hofstetter

Zappe

1996

SPIE Proceedings

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“…Interdiffusion has been applied to the fabrication of high-reliability blue-shifted InGaAsP/InP, 9 GaAs/AlGaAs, 10 and InGaAs-GaAs 11 lasers. It has been applied to improve the performance of highspeed lasers, 12 multiple wavelength lasers, 13,14 low-threshold current lasers, 15 lasers with saturable absorbers. 16 Output power of high power quantum well lasers was considerably increased after fabrication of nonabsorbing mirrors using interdiffusion.…”

Section: Introductionmentioning

confidence: 99%

Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells

Yuan

Kim

Tan

et al. 1998

Journal of Applied Physics

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Articles you may be interested inEffects of pulsed anodic oxide on the intermixing in InGaAs/GaAs and InGaAs/AlGaAs quantum wells J. Appl. Phys. 93, 9823 (2003) Enhancement of interdiffusion in GaAs/AlGaAs quantum wells due to anodic oxides was studied. Photoluminescence, transmission electron microscopy, and quantum well modeling were used to understand the effects of intermixing on the quantum well shape. Residual water in the oxide was found to increase the intermixing, though it was not the prime cause for intermixing. Injection of defects such as group III vacancies or interstitials was considered to be a driving force for the intermixing. Different current densities used in the experimental range to create anodic oxides had little effect on the intermixing. Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wellsShu Yuan, a) Yong Kim, b) H. H. Tan, and C. Jagadish c) Department of Electronic Materials Engineering, Research School of Physical Sciences and Engineering

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“…1͒ and the Paul Scherrer Institute ͑Switzerland͒. [4][5][6] The former institution fabricated sideby-side laser diodes with quaternary cladding and QW layers, while at the latter, fabrication of GaAs/AlGaAs-based photonic integrated circuits forming a double Michelson interferometer was realized. In the late nineties, McCluskey succeeded in the complete intermixing of p-doped InGaN/ GaN QWs at very high temperatures of 1300 to 1400°C.…”

mentioning

confidence: 99%

“…They are used for the fabrication of high quality stripe lasers, 1,2 nonabsorbing mirror sections of Fabry-Perot lasers, 3 and also for the fabrication of photonic integrated circuits. [4][5][6] Many different semiconductors have shown similar effects with specific temperatures for each material system, be it GaAs/AlGaAs, GaP/InGaAsP, or even GaN/InGaN. In the early days, most experiments were performed on GaAs/ AlGaAs-based superlattices ͑SLs͒.…”

mentioning

confidence: 99%

Si-interdiffusion in heavily doped AlN-GaN-based quantum well intersubband photodetectors

Hofstetter

Francesco

Martin

et al. 2011

Applied Physics Letters

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We demonstrate the effect of rapid thermal annealing on heavily Si-doped AlN/GaN quantum wells. After 1000°C annealing during 5, 10, and 20 min, the dominant effect was interdiffusion of Si rather than intermixing between the Al and Ga atoms. Both their original value and the magnitude of the changes after annealing reveal that intersubband absorption and photovoltage are related to two different optical transitions as follows: absorption occurs in the 1 to 2 intersubband transition, whereas photovoltage is due to a subsequent process from the 1 to 2 and the manifold of 2 to higher order transitions.Impurity interdiffusion and quantum well ͑QW͒ intermixing are two versatile techniques which have seen widespread use in many semiconductor based technologies. They are used for the fabrication of high quality stripe lasers,

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Multiple wavelength Fabry–Pérot lasers fabricated by vacancy-enhanced quantum well disordering

Cited by 29 publications

References 8 publications

Monolithically integrated interferometer for optical displacement measurement

Monolithically integrated interferometer for optical displacement measurement

Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells

Si-interdiffusion in heavily doped AlN-GaN-based quantum well intersubband photodetectors

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