Multiple substrate microwave plasma-assisted chemical vapor deposition single crystal diamond synthesis

Asmussen, J.; Grotjohn, T.A.; Schuelke, Thomas; Becker, Michael F.; Yaran, M.K.; King, David; Wicklein, Sebastian; Reinhard, D.K.

doi:10.1063/1.2961016

Cited by 45 publications

(28 citation statements)

References 11 publications

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“…Substrate temperature is kept around 700 o C. Details of the CVD reactor and standard deposition process of UNCD films are given elsewhere 10 . Tungsten (W) coated Si wafers were used as substrates.…”

Section: Methodsmentioning

confidence: 99%

Ion Beam Analysis Of Nitrogen Incorporated Ultrananocrystalline Diamond (UNCD) Thin Films

AlFaify

Garratt

Dissanayake

et al. 2011

AIP Conference Proceedings

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Electrical conduction in undoped ultrananocrystalline diamond thin films and its dependence on chemical composition and crystalline structure Abstract. Determination of the elemental composition is important to correlate the properties of nitrogen incorporated Ultrananocrystalline Diamond (UNCD) thin films with their growth conditions. Films were deposited by CVD deposition technology and nitrogen incorporation was introduced by diluting the growth Ar/CH 4 plasma with N 2 gas. Deposition of UNCD thin films was carried out on tungsten (~ 15nm) coated Si substrates with varying concentrations of N 2 diluted to the growth plasma. Scanning electron microscopy (SEM) and Raman spectroscopy (RS) were used to confirm the characteristic morphology of the UNCD film and its dominant sp 3 bonding respectively. The deposited films were smooth on the submicron scale with the RMS roughness value of 2.9-5.1 nm. Reflectometry spectroscopy analysis (RES) technique was used to measure the films thicknesses. To obtain the elemental composition of the UNCD thin films, Rutherford Backscattering Spectrometry (RBS), Non-Rutherford Backscattering Spectrometry (NRBS), Elastic Recoil Detection Analysis (ERDA) and Nuclear Reaction Analysis (NRA) were performed. Deposited UNCD films contained less than 5 at.% of H while N content incorporated in the films was estimated to be lower than 1 at.%. The intermixing region between the substrate and the film was found to be negligible. Moreover, amorphous phase as determined by Raman analysis was found to be increasing for the sample deposited with N 2 .

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Section: Methodsmentioning

confidence: 99%

Ion Beam Analysis Of Nitrogen Incorporated Ultrananocrystalline Diamond (UNCD) Thin Films

AlFaify

Garratt

Dissanayake

et al. 2011

AIP Conference Proceedings

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“…In fact (110)-oriented substrates are commercially available but with a limited size (typically 3x3 mm² or below). Due to cuboctahedral growth, when [110]-oriented diamond plates are extracted from the HPHTgrown crystal, multiple sectors are usually obtained [232] which constitutes an important drawback since sector boundaries lead to stress and defect formation [94,236]. In addition, since homoepitaxial layers on (110)-oriented diamond substrates have one of the highest growth rates under standard CVD conditions [230], the top surface tend to rapidly disappear during growth limiting the final surface area when thick films are required.…”

Section: Growth On [110]-oriented Substratesmentioning

confidence: 99%

Chemical vapour deposition diamond single crystals with nitrogen-vacancy centres: a review of material synthesis and technology for quantum sensing applications

Achard¹,

Jacques²,

Tallaire³

2020

J. Phys. D: Appl. Phys.

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Diamond is a host for a wide variety of colour centres that have demonstrated outstanding optical and spin properties. Among them, the nitrogen-vacancy (NV) centre is by far the most investigated owing to its superior characteristics, which promise the development of highly sophisticated quantum devices, in particular for sensing applications. Nevertheless, harnessing the potential of these centres mainly relies on the availability of high quality and purity diamond single crystals that need to be specially designed and engineered for this purpose. The plasma assisted Chemical Vapour Deposition (CVD) has become a key enabling technology in this field of research. Nitrogen can indeed be directly in-situ doped into a high crystalline quality diamond matrix in a controlled way allowing the production of single isolated centres or ensembles that can potentially be integrated into a device.In this paper we will provide an overview on the requirements for synthesizing "quantum-grade" diamond films by CVD. These include the reduction of impurities and surrounding spins that limit coherence times, the control of NV density in a wide range of concentrations as well as their spatial localization within the diamond. Enhancing the charge state and preferential orientation of the colour centres is also discussed. These improvements in material fabrication have contributed to position diamond as one of the most promising solid-state quantum system and the first industrial applications in sensing are just starting to emerge.

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“…[1][2][3][4][5][6][7][8] In particular, MPCVD offers advantages over other techniques with respect to high purity deposition environment achieved, scale-up capability for larger substrates, and the quality of the diamond crystals grown. One of the major operating parameters during diamond growth by MPCVD is the internal process control variable.…”

Section: Introductionmentioning

confidence: 99%

Optical emission diagnostics of plasmas in chemical vapor deposition of single-crystal diamond

Hemawan

Hemley

2015

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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A key aspect of single crystal diamond growth via microwave plasma chemical vapor deposition is in-process control of the local plasma–substrate environment, that is, plasma gas phase concentrations of activated species at the plasma boundary layer near the substrate surface. Emission spectra of the plasma relative to the diamond substrate inside the microwave plasma reactor chamber have been analyzed via optical emission spectroscopy. The spectra of radical species such as CH, C2, and H (Balmer series) important for diamond growth were identified and analyzed. The emission intensities of these electronically excited species were found to be more dependent on operating pressure than on microwave power. Plasma gas temperatures were calculated from measurements of the C2 Swan band (d3Π → a3Π transition) system. The plasma gas temperature ranges from 2800 to 3400 K depending on the spatial location of the plasma ball, microwave power and operating pressure. Addition of Ar into CH4+H2 plasma input gas mixture has little influence on the Hα, Hβ, and Hγ intensities and single-crystal diamond growth rates.

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Multiple substrate microwave plasma-assisted chemical vapor deposition single crystal diamond synthesis

Cited by 45 publications

References 11 publications

Ion Beam Analysis Of Nitrogen Incorporated Ultrananocrystalline Diamond (UNCD) Thin Films

Ion Beam Analysis Of Nitrogen Incorporated Ultrananocrystalline Diamond (UNCD) Thin Films

Chemical vapour deposition diamond single crystals with nitrogen-vacancy centres: a review of material synthesis and technology for quantum sensing applications

Optical emission diagnostics of plasmas in chemical vapor deposition of single-crystal diamond

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