Multiple stacking of InGaAs/GaAs (731) nanostructures

Abstract

We studied the multilayering effects of InGaAs quantum dots (QDs) on GaAs(731), a surface lying inside of the stereographic triangle. The surfaces after stacking 16 InGaAs layers were characterized with highly non-uniformity of QD spatial distribution. The bunched step regions driven by strain accumulation are decorated by QDs, therefore GaAs(731) becomes a good candidate substrate for the growth of QD clusters. The unique optical properties of the QD clusters are revealed by photoluminescence measurements. By adjusting the coverage of InGaAs, a bamboo-like nanostructured surface was observed and the quantum dots aligned up in clusters to separate the "bamboo" into sections. Most of the researches chose a surface index located between two low index planes out of the three, (100), (110), and (111). KeywordsIn other words, the popular choice was a surface index on the sides of the stereographic triangle defined by the three low index planes [3]. For example, GaAs(311), one of the most popular choice, locates between the (100) and (111)