Multiple quantum well optical modulators and spatial light modulators

Jain, F.C.; Cheung, S. K.

doi:10.1117/12.259690

Cited by 4 publications

(2 citation statements)

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“…They can be fabricated either in waveguide or surface normal configurations. 9 The schematic of Fig. 1 shows a waveguide type in-line modulator of length l. Here the index change ⌬n causes phase change ⌬ ϭ2l⌬n/.…”

Section: Index Of Refraction Changes ⌬N As a Function Of Electric Fieldmentioning

confidence: 99%

Integrated InGaAs-InP quantum wire laser-modulators for 1.55-μm applications

Huang

Jain

2004

Opt. Eng

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Quantum wire lasers and modulators offer superior performance over their quantum well counterparts. We present simulations of an integrated InGaAs-InP quantum wire laser-modulator structure operating at 1.55 m. In the case of quantum wire lasers, we have computed the optical gain as a function of current density for wires having widths ranging between 60 and 100 Å. For example, the threshold current density of 61 A/cm 2 is computed for a wire with a width of 80 Å. In the case of quantum wire modulators, we compute the changes in the absorption coefficient and index of refraction due to an external electric field to implement electroabsorptive and electrorefractive optical modulators. For example, the absorption coefficient changes (⌬␣/␣) by 450% when an applied electric field changes from 30 to 60 kV/cm for an 80 Å quantum wire. The corresponding change of refractive index is about 11%. A structure integrating an edge-emitting laser with an in-line type electroabsorptive or electrorefractive modulator is presented. The quantum wires are designed to operate the laser at a wavelength that corresponds to the Stark effect tuning of the modulator. We can maximize the changes in electroabsorptive and electrorefractive modulators by choosing the right combination of wire dimensions, operating wavelengths, and electric fields.

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Section: Index Of Refraction Changes ⌬N As a Function Of Electric Fieldmentioning

confidence: 99%

Integrated InGaAs-InP quantum wire laser-modulators for 1.55-μm applications

Huang

Jain

2004

Opt. Eng

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“…Traditionally, acousto-optic interaction is realized by an acoustic wave-induced refractive index grating such as the Bragg grating or Raman-Nath grating. Recently, another type of acousto-optic modulator has been proposed [1][2][3] that utilizes the SAW-induced absorption coefficient or refractive index changes in MQWs of III-V semiconductor materials. The major difference is that these new types of acousto-optic modulators operate at frequency near resonance with the energy levels of the medium.…”

Section: Introductionmentioning

confidence: 99%

SAW-induced birefringence in InGaAs-GaAs multiple quantum well acousto-optic modulators

Wang

Dufilie

Jain

2002 IEEE Ultrasonics Symposium, 2002. Proceedings.

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A theoretical study of surface acoustic wave (SAW)-induced absorption coefficient and refractive index change in InGaAs-GaAs multiple quantum well (MQW) structures is presented. We use a two-dimensional Gaussian quadrature method to solve for the exciton oscillator strength in twodimensional momentum space.This method accounts for the asymmetric strain and electric field induced by the SAW. The optical absorption coefficient and refractive index changes near the band gap in MQWs are calculated as a function of SAW power at different well widths. We have found that SAW-induced birefringence is significantly dependent on the intrinsic strain. We computed birefringence ∆n=0.06 in 0.7% tensile strained InGaAs-GaAs MQWs for the two different polarizations (parallel and perpendicular to the SAW propagation direction) under normal incident light at a SAW power of 10 mW/λ SAW . This is a great improvement over our earlier compressively strained (~-1%) InGaAs-GaAs MQW modulators (∆n=0.01). The calculations are compared with absorption coefficient measurements on compressively strained InGaAs-GaAs MQW modulators.

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