Multiple Nonvolatile Resistance States Tuned by Electric Pulses in the Hysteresis Temperature Range of 1T‐TaS₂

Abstract

Compared with systematically investigated resistance switching, nonvolatile multi‐level memristors are highly desired due to their stochastic or analog ability for artificial intelligence. Here, electric‐pulses‐induced responses of 1T‐TaS2 crystals in hysteresis temperature range are reported. These investigations clearly show that the resistance of the system can be precisely tuned by electric pulses (∼100 V cm−1), forming multiple nonvolatile states in less than 200 ns. The origin of these states and the occurrence of the obstinate triclinic phase activated by pulses are discussed and simulated, implying the rearrangements of the textures composed of commensurate charged‐density‐wave domains separated by discommensurabilities. The multiple nonvolatile resistance states activated conveniently by electric pulses may shed light on the potential applications of artificial synapse devices.