Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

Balatti, Simone; Larentis, Stefano; Gilmer, D. C.; Ielmini, Daniele

doi:10.1002/adma.201204097

Cited by 159 publications

(139 citation statements)

References 24 publications

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“…[1][2][3] More detailed mechanisms of transitions between low and high resistance states have also been discussed. [9][10][11] For example, Tsuruoka et al 9 measured voltage-current curves in a wide temperature range and suggested that the SET process can be understood from the inhomogeneous nucleation and subsequent growth of Cu filament while the RESET process can be attributed to Jouleheating-assisted dissolution. However, such previous analyses are based on classical, macroscopic theories, and thus the atomistic details of the mechanism are not necessarily well understood.…”

Section: Introductionmentioning

confidence: 99%

Conduction paths in Cu/amorphous-Ta2O5/Pt atomic switch: First-principles studies

Xiao

Tada

et al. 2014

Journal of Applied Physics

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We have examined the structure of Cu filaments in Cu/amorphous-Ta2O5 (a-Ta2O5)/Pt atomic switch from first principles. We have found that the Cu single atomic chains are unstable during the molecular dynamics (MD) simulation and thus cannot work as conduction paths. On the other hand, Cu nanowires with various diameters are stable and can form conductive paths. In this case, the Cu-Cu bonding mainly contributes to the conductive, delocalized defect state. These make a sharp contrast with the case of single Cu chains in crystalline Ta2O5, which can be conductive paths through the alternant Cu-Ta bonding structure. A series of MD simulations suggest that even Cu nanowires with a diameter of 0.24 nm can work as conduction paths. The calculations of the transport properties of Cu/a-Ta2O5/Pt heterostructures with Cu nanowires between two electrodes further confirm the conductive nature of the Cu nanowires in the a-Ta2O5.

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Section: Introductionmentioning

confidence: 99%

Conduction paths in Cu/amorphous-Ta2O5/Pt atomic switch: First-principles studies

Xiao

Tada

et al. 2014

Journal of Applied Physics

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“…1,5 This issue will be further exacerbate when the selected cell is in the high resistance state (HRS), whereas all unselected cells are in the low resistance state (LRS). In order to solve above issue, five methods have been proposed, including one transistor-one resistor structure (1T1R), 6,7 one diode-one resistor structure (1D1R), 8,9 one bidirectional selector-one resistor structure (1S1R), 10,11 complementary resistive switch (CRS), [12][13][14][15] and one resistor with self-rectifying effect. [16][17][18][19] Given the facts that integrating additional nonlinear access devices can inevitably increase the complexity of fabrication process and accurate match is usually required between the electrical characteristics of memory cell and nonlinear access device, the first three methods are not advisable for most cases.…”

Section: Introductionmentioning

confidence: 99%

Unipolar resistive switching with forming-free and self-rectifying effects in Cu/HfO2/n-Si devices

et al. 2016

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One of the most effective methods integrating self-rectifying RRAM is alleviating sneak current in crossbar architecture. In this work, to investigate RRAMs with excellent properties of self-rectifying effect, simple Cu/HfO2/n-Si tri-layer devices are fabricated and investigated through I − V characteristic measurement. The experimental results demonstrate that the device exhibits forming-free behavior and a remarkable rectifying effect in low resistance state (LRS) with rectification ratio of 104 at ±1 V, as well as considerable OFF/ON ratio (resistive switching window) of 104 at 1 V. The formation and annihilation of localized Cu conductive filament plays a key role in the resistive switching between low resistance state (LRS) and high resistance state (HRS). In addition, intrinsic rectifying effect in LRS attributes to the Schottky contact between Cu filament and n-Si electrode. Furthermore, satisfactory switching uniformity of cycles and devices is observed. As indicated by the results, Cu/HfO2/n-Si devices have a high potential for high-density storage practical application due to its excellent properties.

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“…A third class of switching, related to bipolar, is termed complementary resistive switching (CRS). Originally proposed as a mechanism occurring in devices in which two resistive switching devices are stacked in an antiseries configuration (conceptually similar to two back-to-back diodes in series) [28,29], more recent reports have demonstrated its existence in single switching layers [30][31][32][33]. In this scheme, in the case of a single layer, a device is initially set into a low resistance state at a threshold voltage V th with no current compliance limit applied.…”

Section: Phenomenology Of Filamentary Resistive Switchingmentioning

confidence: 99%

Resistive Switching in Oxides

Mehonić¹,

Kenyon²

2015

Defects at Oxide Surfaces

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Resistive switching in oxides, the phenomenon whereby the resistance of samples of the matrix can be cycled between states with contrasts of up to several orders of magnitude, has received growing attention over the past decade thanks to the possibility of exploiting this effect in novel memory technologies. Here we summarise the current state of the art in the field, paying particular attention to the underlying mechanisms of switching, which involves the creation of defects in the oxide. We also describe potential technological applications. IntroductionRecent years have seen a rapid growth of interest in materials whose electrical resistance can be changed by the application of an electric field. Of course, the phenomenon of irreversible electrical breakdown (so-called "hard breakdown") in oxides has long been studied as a failure mechanism in microelectronics-initially in capacitors and high voltage devices, then in thin films in integrated microelectronics-and, as such, is of great interest to industry as a problem to be mitigated. However, the resistive switching we refer to here is a reversible process whereby material can be cycled between two or more resistance states many times, enabling non-volatile memory technologies. Because of the range of potential technological applications-from replacements for existing technologies such as flash, to novel neuromorphic (neuron-mimicking) systems-resistive switching is now seen as an opportunity rather than a problem, and academic and industrial interest has grown to the point at which there are several hundred publications per year on all aspects of resistive switching materials and devices. Although we will not discuss fundamental issues associated with defect formation on oxides, these can be found in other chapters in the volume.

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Multiple Memory States in Resistive Switching Devices Through Controlled Size and Orientation of the Conductive Filament

Cited by 159 publications

References 24 publications

Conduction paths in Cu/amorphous-Ta2O5/Pt atomic switch: First-principles studies

Conduction paths in Cu/amorphous-Ta2O5/Pt atomic switch: First-principles studies

Unipolar resistive switching with forming-free and self-rectifying effects in Cu/HfO2/n-Si devices

Resistive Switching in Oxides

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