Multiple Cell Upset Cross-Section Uncertainty in Nanoscale Memories: Microdosimetric Approach

Зебрев, Г. И.; Zemtsov, K. S.; Useinov, Rustem G.; Gorbunov, Maxim S.; Emeliyanov, Vladimir V.; Ozerov, Alexander I.

doi:10.1109/radecs.2015.7365637

Cited by 11 publications

(11 citation statements)

References 15 publications

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“…In fact, information about of the SV depth is implicitly contained in the experimentally determined slope d K . The slope of cross section curve d K has the dimension of the inverse absorbed dose (1 mg/MeV = 62,415 rad -1 , 1 MeV/mg = 1.602×10 -5 rad) and a meaning of the coefficient of the quasi-linear dependence of SBU total number on LET [25]. Such a quasi-dose effect is a direct consequence of non-local nature of the ion impact in nanoscale memories when the charge collection is averaged over several memory cells (not necessarily adjacent) covered by a single ion track.…”

Section: Discussionmentioning

confidence: 99%

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Compact Modeling and Simulation of Heavy Ion Induced Soft Error Rate in Space Environment: Principles and Validation

Зебрев

Galimov

2017

IEEE Trans. Nucl. Sci.

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-A simple physical model for calculation of the ioninduced soft error rate in space environment has been proposed, based on the phenomenological cross section notion. Proposed numerical procedure is adapted to the multiple cell upset characterization in highly scaled memories. Nonlocality of the ion impact has been revealed as the key concept determining the difference between physical processes in low scaled and highly scaled memories. The model has been validated by comparison between the simulation results and the literature on-board data. It was shown that proposed method provides single-valued prediction results correlating well with on-board data based solely on cross section data and LET spectra without any hidden fitting parameters and procedures.

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Section: Discussionmentioning

confidence: 99%

“…Such a quasi-dose effect is a direct consequence of non-local nature of the ion impact in nanoscale memories when the charge collection is averaged over several memory cells (not necessarily adjacent) covered by a single ion track. In the simplest dose model, the slope d K per a bit can be estimated as follows [18,25] …”

Section: Discussionmentioning

confidence: 99%

Compact Modeling and Simulation of Heavy Ion Induced Soft Error Rate in Space Environment: Principles and Validation

Зебрев

Galimov

2017

IEEE Trans. Nucl. Sci.

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“…Specifically, we have injected each type of error (single errors or burst errors of different lengths) in all bits of the codeword to verify the error correction/detection capabilities of the different ECCs. Obviously, burst errors of length 8 will be much less frequent than burst errors of length 2, as bibliography shows [6], [7].…”

Section: International Conference On New Scientific Creations In Engimentioning

confidence: 99%

“…In this paper, we have injected single errors, as well as burst errors with a burst length varying from 2 to 8. This is a representative range in space applications [6], [7]. Notice that burst errors can be adjacent or not, and affect to the layout of the rows.…”

Section: International Conference On New Scientific Creations In Engimentioning

confidence: 99%

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Recovering Multiple Cell Upsets Using Low Power Error Correction Codes in Memory Applications

Saran¹

2019

IJRTER

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Currently, faults suffered by SRAM memory systems have increased due to the aggressive CMOS integration density. Thus, the probability of occurrence of single (SCUs) or multiple-cell upsets (MCUs) augments. One of the main causes of MCUs in space applications is cosmic radiation. A common solution is the use of error correction codes (ECCs). Nevertheless, when using ECCs in space applications, they must achieve a good balance between error coverage and redundancy, and their encoding/decoding circuits must be efficient in terms of area, power, and delay. Different codes have tolerate MCUs. For instance, Matrix codes use Hamming codes and parity checks in a bi-dimensional layout to correct and detect some patterns of MCUs. Recently presented, column (CLC) has been designed to tolerate MCUs in space applications. CLC is a modified Matrix code, based on extended Hamming codes and parity checks. Nevertheless, a common property of these codes is the high redundancy introduce present a series of new low-redundant ECCs able to correct MCUs with reduced area, power, and delay overheads. Also, these new codes maintain, or even improve, memory error coverage with respect to Matrix and CLC codes.

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Error Correction Code: Study, Challenges, and Applications

Vydehi

Lishitha

Pranathi

et al. 2021

Lecture Notes in Electrical Engineering

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Multiple Cell Upset Cross-Section Uncertainty in Nanoscale Memories: Microdosimetric Approach

Abstract: -We found that the energy deposition fluctuations in the sensitive volumes may cause multiplicity scatters in the multiple cell upsets in the nanoscale (with feature sizes less than 100 nm) memories.

Cited by 11 publications

References 15 publications

Compact Modeling and Simulation of Heavy Ion Induced Soft Error Rate in Space Environment: Principles and Validation

Compact Modeling and Simulation of Heavy Ion Induced Soft Error Rate in Space Environment: Principles and Validation

Recovering Multiple Cell Upsets Using Low Power Error Correction Codes in Memory Applications

Error Correction Code: Study, Challenges, and Applications

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