Multiple cell upset cross-section modeling: A possible interpretation for the role of the ion energy-loss straggling and Auger recombination

Зебрев, Г. И.; Zemtsov, K. S.

doi:10.1016/j.nima.2016.04.097

Cited by 11 publications

(10 citation statements)

References 15 publications

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“…The main idea of this model is to link the event multiplicity with the LET. This model mainly concerns integrated devices (with feature sizes less than 100 nm, as mentioned by Zebrev and Zemtsov [29]), and ( 1) is appropriate for LETs that do not allow the saturation level to be reached (see Fig. 4)…”

Section: A Presentation Of the Modelmentioning

confidence: 99%

“…5), it is now necessary to take into account the recombination effect as a function of LET. For this, the model of [29] was used Here, η eff is an effective charge yield and f A = ( / Auger ) 2 where Auger takes into account the Auger recombination. Zebrev and Zemtsov [29] analyzed two devices with different technologies, 90-nm bulk and 45-nm SOI.…”

Section: A Presentation Of the Modelmentioning

confidence: 99%

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New SEU Modeling Method for Calibrating Target System to Multiple Radiation Particles

Caron

Inguimbert

Artola

et al. 2020

IEEE Trans. Nucl. Sci.

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This article proposes a method using electron and proton Single Event Upset sensitivities of a device to deduce all simulation parameters related to an RPP approach. It is shown that for 45-nm double data rate (DDR) memory, the RPP approach is still relevant and the crossing of proton and electron data makes it possible to constrain and properly define the associated parameters. Heavy ion prediction is also presented.

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Section: A Presentation Of the Modelmentioning

confidence: 99%

Section: A Presentation Of the Modelmentioning

confidence: 99%

New SEU Modeling Method for Calibrating Target System to Multiple Radiation Particles

Caron

Inguimbert

Artola

et al. 2020

IEEE Trans. Nucl. Sci.

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show abstract

“…Such a quasi-dose effect is a direct consequence of non-local nature of the ion impact in nanoscale memories when the charge collection is averaged over several memory cells (not necessarily adjacent) covered by a single ion track. In the simplest dose model, the slope d K per a bit can be estimated as follows [18,25] …”

Section: Discussionmentioning

confidence: 99%

“…In contrast to the Weibull function, the linear interpolation turned out to be more robust (see Table I). A slightly decreased value K d at high LETs can be explained by the charge yield reducing due to the Auger recombination [18].…”

Section: B Alternative Data Parametrizationmentioning

confidence: 99%

Compact Modeling and Simulation of Heavy Ion Induced Soft Error Rate in Space Environment: Principles and Validation

Зебрев

Galimov

2017

IEEE Trans. Nucl. Sci.

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-A simple physical model for calculation of the ioninduced soft error rate in space environment has been proposed, based on the phenomenological cross section notion. Proposed numerical procedure is adapted to the multiple cell upset characterization in highly scaled memories. Nonlocality of the ion impact has been revealed as the key concept determining the difference between physical processes in low scaled and highly scaled memories. The model has been validated by comparison between the simulation results and the literature on-board data. It was shown that proposed method provides single-valued prediction results correlating well with on-board data based solely on cross section data and LET spectra without any hidden fitting parameters and procedures.

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“…This method is also discussed by Tang in [1]. For a wide class of the commercial (COTS) nanoscale (feature nodes < 100 nm) circuits the above-threshold ( C    ) ion cross section vs LET dependence can be approximated by a linear function [6,12,13]…”

Section: Direct Problem: Proton Induced Ser From Heavy Ion Testsmentioning

confidence: 99%

GEANT4 simulation of nuclear interaction induced soft errors in digital nanoscale electronics: Interrelation between proton and heavy ion impacts

Galimov

Galimova

Зебрев

2019

Nuclear Instruments and Methods in Physics Research Section A:

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A simple and self-consistent approach has been proposed for simulation of the proton-induced soft error rate based on the heavy ion induced single event upset cross-section data and vice versa. The approach relies on the GEANT4 assisted Monte Carlo simulation of the secondary particle LET spectra produced by nuclear interactions. The method has been validated with the relevant in-flight soft error rate data for space protons and heavy ions. An approximate analytical relation is proposed and validated for a fast recalculation between the two types of experimental data.

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Multiple cell upset cross-section modeling: A possible interpretation for the role of the ion energy-loss straggling and Auger recombination

Cited by 11 publications

References 15 publications

New SEU Modeling Method for Calibrating Target System to Multiple Radiation Particles

New SEU Modeling Method for Calibrating Target System to Multiple Radiation Particles

Compact Modeling and Simulation of Heavy Ion Induced Soft Error Rate in Space Environment: Principles and Validation

GEANT4 simulation of nuclear interaction induced soft errors in digital nanoscale electronics: Interrelation between proton and heavy ion impacts

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