Multiple carrier-transfer pathways in a flower-like In2S3/CdIn2S4/In2O3 ternary heterostructure for enhanced photocatalytic hydrogen production

Ma, Dandan; Shi, Jian‐Wen; Zou, Yajun; Fan, Zhaoyang; Shi, Jinwen; Cheng, Lei; Sun, Diankun; Wang, Zeyan; Niu, Chunming

doi:10.1039/c8nr00170g

Cited by 105 publications

(56 citation statements)

References 63 publications

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“…The transmission electron microscopy (TEM) image in Figure d shows that CdIn 2 S 4 nanosheets are deposited with many tiny NiO nanoparticles. The high‐resolution TEM (HRTEM) image in Figure e shows the lattice spacing of 0.383 and 0.313 nm, which is corresponding to the (220) and (222) planes of CdIn 2 S 4 , respectively . Furthermore, lattice fringe with interface spacing of 0.241 nm is indexed to the (111) plane of NiO layer, suggesting the successful deposition of NiO nanoparticles.…”

Section: Resultsmentioning

confidence: 95%

“…The intensity of the PL spectra is directly related to the degree of recombination of photogenerated carriers. As shown in Figure a, the double‐side‐modified photoanode displays a lower intensity relative to bare CdIn 2 S 4 , which implies efficient charge separation and transportation in the former sample . In addition, TiO 2 /CdIn 2 S 4 /NiO shows broadened PL peak as compared to bare CdIn 2 S 4 .…”

Section: Resultsmentioning

confidence: 95%

“…Among various metal sulfides, CdIn 2 S 4 is a well‐studied n‐type semiconductor with a band gap of ≈2.5 eV . Its suitable band edge positions make it suitable as photoanode in PEC water splitting .…”

Section: Introductionmentioning

confidence: 99%

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Ion Sputtering–Assisted Double‐Side Interfacial Engineering for CdIn₂S₄ Photoanode toward Improved Photoelectrochemical Water Splitting

Tian

Meng

et al. 2020

Adv Materials Inter

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Due to its suitable band energy level and small band gap, CdIn2S4 is a promising photoanode for photoelectrochemical (PEC) water splitting. Nevertheless, the serious charge recombination at the back contact and photoelectrode/electrolyte interface severely hinders its PEC activity. Herein, a facile magnetron ion‐sputtering strategy is adopted to fabricate TiO2 underlayer and NiO overlayer to modify both sides of CdIn2S4 photoanode. The TiO2 underlayer serves as an electron transport layer to promote electrons transfer from CdIn2S4 to fluorine‐doped tin oxide substrate and hinder holes' transportation, thus suppressing the charge recombination at the back contact. NiO, as a p‐type semiconductor, forms a p‐n heterojunction with CdIn2S4, inducing a built‐in electric field to facilitate charge transport. Meanwhile, NiO overlayer acts as a co‐catalyst to enhance surface reaction kinetics, and thereby improves the carrier injection efficiency at photoelectrode/electrolyte interface. As a result, the optimum TiO2/CdIn2S4/NiO photoanode exhibits photocurrent as high as 0.6 mA cm−2 at 1.23 V versus reversible hydrogen electrode, which is about 2.3 times that of bare CdIn2S4. This work provides an effective strategy to manipulate the charge carrier dynamics to improve the PEC activity of photoanode.

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Section: Resultsmentioning

confidence: 95%

Section: Resultsmentioning

confidence: 95%

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Ion Sputtering–Assisted Double‐Side Interfacial Engineering for CdIn₂S₄ Photoanode toward Improved Photoelectrochemical Water Splitting

Tian

Meng

et al. 2020

Adv Materials Inter

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“…In 2 S 3 was a kind of semiconductor widely used for the photocatalytic field for its proper bandgap alignment, easily accessible method, and high efficiency [34–40] . It has a 2.0– 2.2 eV bandgap enabling the longer wavelength light can be absorbed [36,41–47] . The negative enough conduction band position was proved to be −0.79 eV which is strong enough and enables most kinds of reductive reaction happening.…”

Section: Introductionmentioning

confidence: 99%

Facile One‐Pot Solvothermal Synthesis of Noble Metal‐Free NiS Modified In₂S₃‐Based Photocatalyst for Highly Efficient Visible‐Light‐Driven Cr⁶⁺ Removal

Wang

Zan

2020

ChemistrySelect

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Rapidly electrons transferring of noble metal‐free electron mediator NiS modifying In2S3 photocatalysts were synthesized through a one‐pot hydrothermal method. Light with longer wavelength scope and stronger intensity can be absorbed and achieving more rapidly electrons transportation speed. PL and photocurrent spectra demonstrating that NiS‐In2S3 composites have higher charge carrier separation efficiency. HRTEM revealed that NiS and In2S3 were contacted in nano size and have intimate contact with each other. XPS further proved there has an influence of the banding energy between NiS and In2S3. 10 % content sample achieving complete removal of Cr6+ with a trace photocatalyst concertation (0.2 mg/mL) within 30 min which was 3 times higher than pure In2S3. The proper mechanism was proposed that In2S3 was excited by visible light to produce electron‐hole pairs, and NiS acted as a light absorbing intensifier and electron trapper conducting electrons from the In2S3 conduction band to the surface of composites and then reacting with the active species, thus improving the charge carrier separation efficiency and photocatalytic activity

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“…The utilization of solar‐light harvesting photocatalysts for water splitting is a promising strategy for generating H 2 and support sustainable development . Numerous semiconductor‐based photocatalysts including TiO 2 , CdS, bimetallic sulfides, ZnO, and g‐C 3 N 4 , among others, have been developed for this process . Among them, flexible layer‐structured g‐C 3 N 4 is an excellent candidate owing to its appropriate band gap (2.5–2.7 eV) and conduction band.…”

Section: Introductionmentioning

confidence: 99%

Metal‐Organic Framework Templated Synthesis ofg‐C₃N₄/Fe₂O₃@FeP Composites for Enhanced Hydrogen Production

et al. 2019

ChemCatChem

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The simultaneous construction of heterostructures and co‐catalyst loading while maintaining a tight contact favoring charge transfer is important for improving the photocatalytic H2 production of g‐C3N4. Following this approach, we prepared herein a Fe2O3@FeP hybrid material by annealing and phosphidation of a g‐C3N4/Fe metal‐organic framework (MOF). The as‐prepared Fe2O3@FeP was used as both heterojunction and co‐catalyst material to enhance the photocatalytic H2 evolution performance of g‐C3N4 by water splitting under visible‐light irradiation. We developed an optimized g‐C3N4/Fe2O3@FeP‐60 catalyst with a H2 evolution rate as high as 12.03 mmol g−1 h−1 under Eosin Y (EY, 1.0 mmol L−1)‐sensitization. This rate was 12 times higher than that of pristine EY‐sensitized g‐C3N4 (0.97 mmol g−1 h−1). The apparent quantum efficiency (AQE) at 420 nm was 38.8 %. The improved photocatalytic activity of this composite compared to g‐C3N4 can be ascribed to: (i) its enhanced visible‐light absorption intensity; (ii) its efficient electron‐hole separation by the formation of a type‐II heterojunction with Fe2O3 and the loading of an electron collector such as FeP; and (iii) the accelerated H+ reductive reaction resulting from the FeP co‐catalyst. We believe that this work may pave the way for the construction of MOF‐based hybrid H2‐evolution photocatalysts.

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Multiple carrier-transfer pathways in a flower-like In₂S₃/CdIn₂S₄/In₂O₃ ternary heterostructure for enhanced photocatalytic hydrogen production

Cited by 105 publications

References 63 publications

Ion Sputtering–Assisted Double‐Side Interfacial Engineering for CdIn₂S₄ Photoanode toward Improved Photoelectrochemical Water Splitting

Ion Sputtering–Assisted Double‐Side Interfacial Engineering for CdIn₂S₄ Photoanode toward Improved Photoelectrochemical Water Splitting

Facile One‐Pot Solvothermal Synthesis of Noble Metal‐Free NiS Modified In₂S₃‐Based Photocatalyst for Highly Efficient Visible‐Light‐Driven Cr⁶⁺ Removal

Metal‐Organic Framework Templated Synthesis ofg‐C₃N₄/Fe₂O₃@FeP Composites for Enhanced Hydrogen Production

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Multiple carrier-transfer pathways in a flower-like In2S3/CdIn2S4/In2O3 ternary heterostructure for enhanced photocatalytic hydrogen production

Cited by 105 publications

References 63 publications

Ion Sputtering–Assisted Double‐Side Interfacial Engineering for CdIn2S4 Photoanode toward Improved Photoelectrochemical Water Splitting

Ion Sputtering–Assisted Double‐Side Interfacial Engineering for CdIn2S4 Photoanode toward Improved Photoelectrochemical Water Splitting

Facile One‐Pot Solvothermal Synthesis of Noble Metal‐Free NiS Modified In2S3‐Based Photocatalyst for Highly Efficient Visible‐Light‐Driven Cr6+ Removal

Metal‐Organic Framework Templated Synthesis ofg‐C3N4/Fe2O3@FeP Composites for Enhanced Hydrogen Production

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Multiple carrier-transfer pathways in a flower-like In₂S₃/CdIn₂S₄/In₂O₃ ternary heterostructure for enhanced photocatalytic hydrogen production

Ion Sputtering–Assisted Double‐Side Interfacial Engineering for CdIn₂S₄ Photoanode toward Improved Photoelectrochemical Water Splitting

Ion Sputtering–Assisted Double‐Side Interfacial Engineering for CdIn₂S₄ Photoanode toward Improved Photoelectrochemical Water Splitting

Facile One‐Pot Solvothermal Synthesis of Noble Metal‐Free NiS Modified In₂S₃‐Based Photocatalyst for Highly Efficient Visible‐Light‐Driven Cr⁶⁺ Removal

Metal‐Organic Framework Templated Synthesis ofg‐C₃N₄/Fe₂O₃@FeP Composites for Enhanced Hydrogen Production