High quality epitaxial NbN/MgO/NbN Josephson junctions have been realized with MgO barriers up to a thickness of d=1 nm. The junction properties coherently scale with the size of barrier, and low critical current densities down to 3 A/cm 2 have been achieved for larger barriers. In this limit, junctions exhibit macroscopic quantum phenomena for temperatures lower than 90 mK. Measurements and junction parameters support the notion of a possible use of these devices for multiphoton quantum experiments, taking advantage of the fast non equilibrium electron-phonon relaxation times of NbN.PACS numbers: 74.50.+r, 85.25.CpAdvances in the quality of the traditional Josephson structures based on Nb and Al technology as well as the search for high quality junctions of different materials are a major contribution in superconducting electronics.In addition they may respond to a wider spectrum of qubits requirements and functionalities, and may contribute to investigate quantum regimes 1,2 . We inquire on the quantum behavior of low critical current density (J c ) NbN/MgO/NbN Josephson junctions (JJs). These kinds of JJs are usually aimed to high J c values of about 10kA/cm 2 and used in superconducting electronic circuits 3,4 . In this work we show that the NbN junction technology can be extended to low J c values of a) Electronic mail: llongobardi@ms.cc.sunysb.edu about 3A/cm 2 , which are two to four orders of magnitude lower than previously reported values 5 . NbN is a material of great interest for sensor applications 6-9 and it guarantees both fast non equilibrium electron-phonon relaxation times (τ ) and higher gap values, when compared with traditional junction technologies based on Nb, Al and Pb 10 .In this work, a canonical quantum behavior typical of a moderately damped junction is observed along with a crossover temperature between the thermal and quantum regime of about 90 mK. We found a phase diffusion regime, with a damping parameter Q ∼ 3 consistent with what observed in various Josephson systems 11 . The possibility to achieve very low critical current densities in moderately damped NbN junctions, combined with their short electron relaxation time τ < 10ps 12 , paves the way to ex-