Multiparticle exciton-impurity complexes in semiconductors

Kaminskii, A. S.; Karasyuk, V. A.; Pokrovskiı̆, Ya. E.

doi:10.1070/pu1983v026n12abeh004590

Cited by 10 publications

(17 citation statements)

References 8 publications

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“…However at a low excitation rate, emission from comparatively distant pairs dominates and the red shift is reduced. This effect has been previously observed in Si doped with donors and acceptors having similar activation energies 15 . The observed temperature-induced red shift is just the reverse of the well-known blue shift for DAP emission for shallow donors and acceptors 13 .…”

Section: Resultssupporting

confidence: 49%

Defect Luminescence in Heavily Mg Doped GaN

Reshchikov

Wessels

1999

MRS Internet j. nitride semicond. res.

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Behavior of the photoluminescence band at about 2.8 eV in heavily Mg doped GaN has been studied at different temperatures and excitation intensities. The 2.8 eV band is attributed to donor-acceptor transitions involving a Mg acceptor. The large blue shift of the band with increasing excitation intensity is explained by variation in the contribution of close and distant pairs to the luminescence. The red shift of the band with increasing temperature under high excitation intensity conditions results from thermal release of carriers from close pairs. The thermal activation energy of the deep donor, about 0.4 eV, is determined from the quenching of the 2.8 eV luminescence band at high temperatures.

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Section: Resultssupporting

confidence: 49%

Defect Luminescence in Heavily Mg Doped GaN

Reshchikov

Wessels

1999

MRS Internet j. nitride semicond. res.

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“…The linear Zeeman splitting of the D 0 X [9] and A 0 X [10] has been studied and good agreement with the theory has been achieved. The QZE has also been observed for D 0 X [9] and A 0 X [10], but the relatively low magnetic fields used in the reported experimental studies left very high uncertainty in the value of the diamagnetic shifts.…”

Section: Introductionmentioning

confidence: 96%

“…In [15] the authors quoted the precision of the observed diamagnetic shift to be 4%, but they took all heavy and light hole D 0 X diamagnetic shifts to be the same. Data of the same field range as in [15] was treated separately in [9] and a more realistic precision of the order of 25% was reported. Our high magnetic field experiments allow us to measure the diamagnetic shifts with high precision (~1%).…”

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confidence: 99%

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The quadratic Zeeman effect used for state-radius determination in neutral donors and donor bound excitons in Si:P

Litvinenko

Stavrias

et al. 2016

Semicond. Sci. Technol.

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The quadratic Zeeman effect used for state-radius determination in neutral donors and donor bound excitons in Si:P We have measured the near-infrared photoluminescence spectrum of phosphorus doped silicon (Si: P) and extracted the donor-bound exciton (D X results are much more surprising, and the radius of the m J =±3/2 heavy hole is found to be larger than that of the m J =±1/2 light hole.

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“…The observed spectra have been fit by calculating the transition energy of each of the sixty unresolved hyperfine components, and adding a line having a shape similar to the zero-field lineshape (but somewhat narrower) at that energy, with a relative intensity determined by D 0 X → D 0 selection rules, initial state thermalization, and the nuclear polarization. The known electron g-factor is used in the fits, and the D 0 X hole g-factors are adjustable parameters, together with the diamagnetic shifts [21] and the temperature dependence of the band gap energy, all of which are optimized across the spectra at various temperatures and B fields. An effective temperature, slightly higher than the nominal temperature, is obtained from matching the thermalization between the six main D 0 X transitions.…”

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confidence: 99%

Hyperfine Structure and Nuclear Hyperpolarization Observed in the Bound Exciton Luminescence of Bi Donors in Natural Si

et al. 2010

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As the deepest group-V donor in Si, Bi has by far the largest hyperfine interaction and also a large I = 9/2 nuclear spin. At zero field this splits the donor ground state into states having total spin 5 and 4, which are fully resolved in the photoluminescence spectrum of Bi donor bound excitons. Under a magnetic field, the 60 expected allowed transitions cannot be individually resolved, but the effects of the nuclear spin distribution, −9/2 ≤ Iz ≤ 9/2, are clearly observed. A strong hyperpolarization of the nuclear spin towards Iz = −9/2 is observed to result from the nonresonant optical excitation. This is very similar to the recently reported optical hyperpolarization of P donors observed by EPR at higher magnetic fields. We introduce a new model to explain this effect, and predict that it may be very fast.PACS numbers: 78.55. Ap, Recent proposals [1][2][3][4][5] to use the electron and nuclear spins of shallow donor impurities as qubits for Si-based quantum computing (QC) have led to renewed interest in these systems [5][6][7][8][9][10][11]. Most studies have focused on 31 P, the most common donor in Si, with an I = 1/2 nuclear spin. Most QC schemes involve enriched 28 Si, as this eliminates the 29 Si nuclear spin, but the removal of inhomogeneous isotope broadening [6] also enables an optical measurement of the donor electron and nuclear spin using the donor bound exciton (D 0 X) transition [7], and furthermore allows for the hyperpolarization of both spin systems at very low magnetic fields by resonant optical pumping [10]. McCamey et al. [9] have reported a different effect in which P nuclear hyperpolarization can be achieved with nonresonant optical excitation in natural Si at high magnetic field and low temperature.Bismuth is the deepest group-V donor in Si, with a binding energy of 70.98 meV [12], and is monoisotopic ( 209 Bi), with a large I = 9/2 nuclear spin and a hyperfine interaction of 1475.4 MHz, more than 12 times the 117.53 MHz value for 31 P [13]. While invoked in some QC proposals [4], Bi has not been the subject of recent study. It is interesting to note that the Bi D 0 X in Si is described in the earliest studies of bound excitons (BE) in semiconductors [14,15] but has received little attention since then [16]. This likely resulted from the scarcity of samples and, until now, their low quality.Recently [17], Si:Bi samples have been grown from ultrapure natural Si ( nat Si) using a floating-zone technique, for applications involving far-infrared lasers [18]. Samples from those same crystals are studied here, and show very reproducible D 0 X no-phonon (NP) photoluminescence (PL) structure over a wide range of Bi concentration. The spectra shown here are from a slice having a resistivity of 5.5 Ω·cm, mostly due to Bi, since the residual B and P concentrations are estimated to be at least an order of magnitude less than the Bi concentration. The sample was mounted without strain in a high homogeneity (0.01 %) split pair superconducting magnet dewar in Voigt configuration, with magnetic field ...

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Multiparticle exciton-impurity complexes in semiconductors

Cited by 10 publications

References 8 publications

Defect Luminescence in Heavily Mg Doped GaN

Defect Luminescence in Heavily Mg Doped GaN

The quadratic Zeeman effect used for state-radius determination in neutral donors and donor bound excitons in Si:P

Hyperfine Structure and Nuclear Hyperpolarization Observed in the Bound Exciton Luminescence of Bi Donors in Natural Si

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