1993
DOI: 10.1063/1.352421
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Multiparameter measurements of thin films using beam-profile reflectometry

Abstract: Beam-profile reflectometry is a new technique for measuring the thickness and optical constants of dielectric, semiconducting, and thin metal films. The technique consists of measuring the intensity profile of a highly focused beam reflected from the sample. By using a linearly polarized light source and a tightly focussed beam, the S-and P-polarization reflectivities of the film are simultaneously obtained over a wide range of angles. The focusing also provides a submicrometer spot, thus allowing these measur… Show more

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Cited by 29 publications
(15 citation statements)
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“…Introduced by Therma-Wave Inc. in 1991 6,7 , this technology uses a laser beam incident upon a sample through a high numerical aperture lens to provide illumination at a range of angles-of-incidence (typically from normal up to around 60°) simultaneously. The spatial profiles of the reflected laser beam along its two principal axes (parallel and perpendicular to the polarization direction) are analyzed in order to obtain plots of reflectance as a function of angle of incidence for s and p polarized light independently.…”
Section: Beam Profile Reflectometry (Bpr)mentioning
confidence: 99%
“…Introduced by Therma-Wave Inc. in 1991 6,7 , this technology uses a laser beam incident upon a sample through a high numerical aperture lens to provide illumination at a range of angles-of-incidence (typically from normal up to around 60°) simultaneously. The spatial profiles of the reflected laser beam along its two principal axes (parallel and perpendicular to the polarization direction) are analyzed in order to obtain plots of reflectance as a function of angle of incidence for s and p polarized light independently.…”
Section: Beam Profile Reflectometry (Bpr)mentioning
confidence: 99%
“…The reflected beam goes through several beam splitters (BS4, BS2 and BS3), and then pass through a quarter wave plate, before being collected by a high resolution CCD camera. This optical characterization technique, that we call Reflectometry at Profile Level (RPL), was developed in collaboration with Nightingale EOS [9], and it is a variation of two former techniques, Beam Profile Reflectometry and Beam Profile Ellipsometry [10][11][12]. The more remarkable characteristics are that the system collects the reflectivity of a variety of angles of incidence and polarization states with a single measurement, and with a sub-micrometric spot size.…”
Section: Methodsmentioning
confidence: 99%
“…Eq. (1) has been previously applied for measuring the thickness and optical properties of films in stacks using different techniques as beam profile reflectometry, beam profile ellipsometry or spectroscopic beam profile ellipsometry [13,14].…”
Section: í Id Model Explanationmentioning
confidence: 99%