Multimode interference photonic switches (MIPS)

Use of Reconfigurable IM Regions to Suppress Propagation and Polarization Dependent Losses in a MMI Switch

“…[12][13][14][15] Index profile of the channel waveguides is chosen in the range of 2.10-2.20 in agreement with available data and the literature survey to investigate the switching characteristics. Various EO/TO crystals such as Ti-indiffused or proton exchanged lithium niobate (α : LiNbO 3 ), lithium tantalate (LiTaO 3 ), potassium niobate (KNbO 3 ), barium-sodium niobate (BNN), strontium-barium niobate (SBN), bismuth germinates crystals of evlitine structure (Bi 4 Ge 3 O 12 ), lithium iodate (α -LiIO 3 ) etc.…”

High-speed optical switching of InAlGaAs/InAlAs multi-mode interference photonic switch with partial index-modulation region (MIPS-P)

“…However, to meet the demand for transferring and routing burst and packet optical signals, which need much higher switching speed in nano-second (ns) order, development of high-speed optical switches is definitely required. For this purpose, we proposed a semiconductor multi-mode interference photonic switch with partial-index modulation regions (MIPS-P) [1,2,3,4] which operates by current injection via plasma effect and can be expected to exhibit high-speed switching with ns-order response time. As for the material aspect, the MIPS-P using InGaAsP/InP has been investigated so far [3,4], but it gave poor carrier confinement due to rather small hetero-barrier height energy of the conduction band rendering larger switching current.…”

“…For this purpose, we proposed a semiconductor multi-mode interference photonic switch with partial-index modulation regions (MIPS-P) [1,2,3,4] which operates by current injection via plasma effect and can be expected to exhibit high-speed switching with ns-order response time. As for the material aspect, the MIPS-P using InGaAsP/InP has been investigated so far [3,4], but it gave poor carrier confinement due to rather small hetero-barrier height energy of the conduction band rendering larger switching current. In this letter, we fabricated an InAlGaAs/InAlAs MIPS-P with larger hetero-barrier height for effective carrier confinement, and experimentally demonstrated low current and high-speed switching operation with a switching current of 24 mA and a response time of about 1.5 ns or less by applying voltage pulses at 10 MHz repetition rate.…”

Multimode interference photonic switches

“…In first configuration, the confinement guide region is created [10][11][12]38 to allow the light to pass through the region, as shown in Fig. 4.…”