Multilayered PdSe₂/Perovskite Schottky Junction for Fast, Self‐Powered, Polarization‐Sensitive, Broadband Photodetectors, and Image Sensor Application

Abstract

Group‐10 transition metal dichalcogenides (TMDs) with distinct optical and tunable electrical properties have exhibited great potential for various optoelectronic applications. Herein, a self‐powered photodetector is developed with broadband response ranging from deep ultraviolet to near‐infrared by combining FA1−xCsxPbI3 perovskite with PdSe2 layer, a newly discovered TMDs material. Optoelectronic characterization reveals that the as‐assembled PdSe2/perovskite Schottky junction is sensitive to light illumination ranging from 200 to 1550 nm, with the highest sensitivity centered at ≈800 nm. The device also shows a large on/off ratio of ≈104, a high responsivity (R) of 313 mA W−1, a decent specific detectivity (D*) of ≈1013 Jones, and a rapid response speed of 3.5/4 µs. These figures of merit are comparable with or much better than most of the previously reported perovskite detectors. In addition, the PdSe2/perovskite device exhibits obvious sensitivity to polarized light, with a polarization sensitivity of 6.04. Finally, the PdSe2/perovskite detector can readily record five “P,” “O,” “L,” “Y,” and “U” images sequentially produced by 808 nm. These results suggest that the present PdSe2/perovskite Schottky junction photodetectors may be useful for assembly of optoelectronic system applications in near future.

Interface‐Induced High Responsivity in Hybrid Graphene/GaAs Photodetector

“…The photo‐transient response of our devices was also identified. The signals show strong repeatability after multiple operating cycles and can keep initial response values even after storage in air for 3 weeks, as depicted in Figure S5, Supporting Information, indicating the good stability and repeatability of photodetector operation 41,42. The time‐dependent photocurrents for various representative back gate voltages of 0, 15, and 30 V were measured as the laser was turned on and off.…”

Low‐Dimensional Metal Halide Perovskite Photodetectors

“…Furthermore, the idea of fabricating self-powered perovskite PDs based on Schottky junctions is equally important, and many Schottky junction PDs with asymmetric electrodes have been demonstrated. [304,305] In addition to the fabrication of junctions, self-powered PDs can be achieved by spontaneous polarization of perovskite ferroelectrics due to their unique structural features. Liu et al achieved self-powered photodetection by ferroelectric polarization of homogeneous 2D RP perovskite (EA) 2 (MA) 2 Pb 3 Br 10 (EA = ethylammonium).…”

Optical anisotropy of one-dimensional perovskite C4N2H14PbI4 crystals

“…Optical anisotropy is of great importance for the development of polarization-sensitive optoelectronic devices [1,2]. Recently, in-plane anisotropic physical properties were demonstrated in several 2D layered materials such as black phosphorus (BP) [3,4], GaTe [5], ReSe 2 [6], SnS [7] and SeGe [8] due to their low-symmetry crystal structures.…”