Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection

Gilbertson, A. M.; Sadeghi, Hatef; Panchal, Vishal; Kazakova, Olga; Lambert, Colin J.; Solin, S. A.; Cohen, L. F.

doi:10.1063/1.4936932

Cited by 5 publications

(2 citation statements)

References 35 publications

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“…For the bend geometry, the simulated reference map (figure 2(b)) for a uniform 1LG device also shows a two-fold symmetry along the diagonal axis of the cross; with the additional positive band that spans from bottom left to top right corner. Both geometries are consistent with previous results on semiconductor devices [55,56].…”

Section: Sgm Response To 1lg and 2lgsupporting

confidence: 93%

Qualitative analysis of scanning gate microscopy on epitaxial graphene

et al. 2019

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We present scanning gate microscopy (SGM) studies of graphene Hall-cross devices where bi-layer graphene (2LG) regions show unexpected signal inversion relative to single-layer graphene (1LG), an observation reproduced via finite element modelling of the current densities. This is attributed to gate-induced charge carrier redistribution between the two layers in 2LG. Hall cross devices were fabricated from epitaxial graphene 6H–SiC(0 0 0 1) and were covered by 1LG/2LG with the area ratio of 85:15%, respectively. Local electric-field sensitivity maps of the devices were obtained in two different measurement geometries using electrical SGM with a conductive tip, where it was observed that the voltage of 2LG islands was inverted relative to anticipated reference maps. Finite element modelling of the current densities and voltage response showed good qualitative agreement with the SGM maps when the effect of the gate was reversed for 2LG. The behaviour is attributed to gate-induced charge carrier redistribution between the two layers in 2LG. The model can be used generally as a tool to predict mixed 1LG/2LG response to electric field. Moreover, regions near the corners of the device show the highest sensitivity when the local electric field was applied to the scanning probe microscopy tip. These regions are capable of detecting highly local electric fields down to 110 kV cm−1.

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Section: Sgm Response To 1lg and 2lgsupporting

confidence: 93%

Qualitative analysis of scanning gate microscopy on epitaxial graphene

et al. 2019

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“…Although the absorption is limited by the excessive transmission energy loss and complex drift path of carriers, the configuration based on Hall effect can provide a feasible design approach in ultrafast full-spectrum photoelectric devices with high responsivity. [251,252] Recently, Weyl semimetal materials like NbP and TaIrTe 4 have also been used for rectification in the THz field, [253,254] which can generate a strong Hall voltage without constructing vertical magnetic field due to the existence of Berry curvature dipole and nonlinear Hall effect, resulting in greatly simplified design. The operating frequency range can be extended from THz to radio frequency.…”

Section: Mms-based Pc In Thz Rangementioning

confidence: 99%

Metamaterials‐Based Photoelectric Conversion: From Microwave to Optical Range

Chai

Wang

Chen

et al. 2021

Laser & Photonics Reviews

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Photoelectric conversion (PC) is an essential process for the devices based on the utilization of electrical signals, such as solar cells, sensors, imaging, and communication. As an emerging research field, great advances are made in the PC devices based on the metamaterials (MMs) hitherto. The MMs exhibit unique electromagnetic resonance properties, which can be used for perfect absorbers and are promising for efficient PC from microwave to optical range, though the absorption mechanism varies with the waveband. Perfect absorption in the microwave is mainly induced by the electromagnetic polariton resonance, and surface plasmon resonance (SPR) becomes dominant as the frequency approaches to optical band. Thus, the MMs-based photoelectric devices are realized via an electronic approach in the microwave band, and are based on the SPR-induced hot carriers in the optical band. Since terahertz wave falls between the microwave and optical band, terahertz photoelectric devices exhibit unique characteristic different from the electronics and optics, while still bear similarity to both of them, which is dependent on the frequency. Hence, this review covers major advances in the aspects of fundamentals and engineering for the MMs-based photoelectric devices from microwave to optical range.

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