The forthcoming saturation of Moore's law has led to a strong demand for integrating analog functionalities within semiconductor-based devices. As a step towards this goal, we fabricate quaternary-responsive WSe 2 -based field-effect transistors (FETs) whose output current can be remotely and reversibly controlled by light, heat and electric field. A photochromic silaneterminated spiropyran (SP) is chemisorbed on SiO 2 forming a self-assembled monolayer (SAM) that can switch from the SP to the merocyanine (MC) form in response to UV illumination and switch back by either heat or visible illumination. Such SAM is incorporated at the dielectric-semiconductor interface in WSe 2 -based FETs. Upon UV irradiation, a drastic decrease in the output current of 82% is observed and ascribed to the zwitterionic MC isomer acting as charge scattering site. To impart an additional functionality, the WSe 2 top surface is coated with a ferroelectric co-polymer layer based on poly(vinylidene fluoride-cotrifluoroethylene) (P(VDF-TrFE)). Due to its switchable inherent electrical polarization, it can promote either the accumulation or depletion of charge carriers in the WSe 2 channel, thereby 2 inducing a current modulation with 99% efficiency. Thanks to the efficient tuning sparked by the two components and their synergistic effects, the device polarity could be modulated from n-type to p-type. Such a control over the carrier concentration and device polarity is key to develop 2D advanced electronics. Moreover, the integration strategy of multiple stimuliresponsive elements into a single FET allows to greatly enrich its functionality, thereby promoting the development for More-than-Moore technology.