Multifunctional metal selenide-based materials synthesized via a one-pot solvothermal approach for electrochemical energy storage and conversion applications

Abstract

High-efficient electroactive materials with distinct electrochemical features, along with suitable strategies to prepare hetero-nanoarchitectures incorporating two/more transition-metal selenides, are currently required to increase charge-storage ability. In this study, one-pot solvothermal...

Modulating Electronic Structure by Etching Strategy to Construct NiSe2/Ni0.85Se Heterostructure for Urea‐Assisted Hydrogen Evolution Reaction

“…[18] Meanwhile, the lattice fringe with a d-spacing of 0.272 nm was indexed to the (101) crystal facets of the hexagonal Ni 0.85 Se (JCPDS: 00-018-0888). [20] There exists a clear interface between NiSe 2 and Ni 0.85 Se. Therefore, it could be speculated the presence of NiSe 2 and Ni 0.85 Se in the NiSe 2 /Ni 0.85 Se-2h electrocatalyst after the HER test.…”

“…In the edge of the NiSe 2 /Ni 0.85 Se-2h octahedra, the high-resolution lattice fringes, which exhibited diameters of about 0.150 nm, corresponded to the (201) crystal plane of hexagonal phase Ni 0.85 Se (JCPDS: 00-018-0888). [20] The detailed information of the standard hexagonal phase Ni 0.85 Se (JCPDS: 00-018-0888) card was listed in Table S2, Supporting Information. What is more, a clear boundary could be recognized between NiSe As presented in Figure 2a, the X-ray diffraction (XRD) tests have been executed to precisely explore the chemical compositions of the as-obtained different samples.…”

“…[18] After etching treatment for 2 h, there emerged a new component, the diffraction peaks centered at 33.2°, 44.9°, 50.5°, and 60.2°corresponded to the (101), (102), (110), and (103) crystal planes of the hexagonal phase Ni 0.85 Se (JCPDS: 00-018-0888), respectively. [20] With the prolonged etching treatment time, it could be found the increased content of Ni 0.85 Se and the decrease of NiSe 2 in the NiSe 2 /Ni 0.85 Se heterostructure octahedra (Figure S4, Supporting Information). When the etching treatment time approached 12 h, NiSe 2 could be totally transformed into Ni 0.85 Se (Figure 2a).…”