Multifunctional Macroassembled Graphene Nanofilms with High Crystallinity

Abstract

electronic and optoelectronic devices that might compete (for certain applications) with SLG, and that might be used in other ways that SLG and thicker macroassembled graphene films cannot be used for.Research data are not shared.

Macroscopic assembled graphene nanofilms based room temperature ultrafast mid‐infrared photodetectors

“…The preparation method is shown in reference. 12 First, a diluted GO solution with a concentration of 4 μg L À1 was filtrated under vacuum by AAO filters (Whatman, pore size, 0.2 μm; diameter, 48 mm) with a small contacting area below 40%. The supported GO membrane on the AAO filter was then reduced by HI vapor for 4 h in a sealed container heated under 60 C. Then the rGO/AAO membrane was placed on a bottle (diameter, 48 mm) containing camphor with the rGO side facing camphor.…”

“…nMAG was prepared from defective GO with an average size of 100 μm, provided by Hangzhou Gaoxi Technology Co., Ltd. (http://www.gaoxitech.com). The preparation method is shown in reference 12 . First, a diluted GO solution with a concentration of 4 μg L −1 was filtrated under vacuum by AAO filters (Whatman, pore size, 0.2 μm; diameter, 48 mm) with a small contacting area below 40%.…”

“…(I) wet-assembly of GO nanofilm and chemical reduction, (II) camphor-assisted separation, and (III) thermal annealing. 12 The obtained nMAG (4.2 cm in diameter, 45 nm thick) exhibits mobility of ~1325 cm 2 V À1 s À1 (Figure S2) due to its high crystallinity. The twodimensional diffraction patterns in Figure 1E show all high-order hkl reflections of nMAG, indicating a high graphitization degree of nMAG.…”

“…Figure1A-D illustrates the preparation steps of nMAG: (I) wet-assembly of GO nanofilm and chemical reduction, (II) camphor-assisted separation, and (III) thermal annealing 12. The obtained nMAG (4.2 cm in diameter, 45 nm thick) exhibits mobility of ~1325 cm 2 V À1 s À1 (FigureS2) due to its high crystallinity.…”

Graphene Nanofilms/Silicon Near-Infrared Avalanche Photodetectors

“…However, caused by its monoatomic layer structure, graphene shows a low light absorption of 2.3% [12], which results in low hot carrier density and hence low quantum efficiency, especially in the IR region. Some strategies increase the light absorption of graphene optoelectronic devices [13][14][15][16], sacrificing the broadband property. A possible solution is to use multilayer graphene instead of single-layer (SLG) to increase light absorption.…”