Multifilled nanocrystalline p-type didymium – Skutterudites with ZT&gt;1.2

Rogl, Gerda; Grytsiv, A.; Rogl, P.; Bauer, E.; Kerber, Michael; Zehetbauer, M.; Puchegger, S.

doi:10.1016/j.intermet.2010.08.041

Cited by 103 publications

(78 citation statements)

References 48 publications

(48 reference statements)

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“…[38][39][40] The values of ZT < 0.1 presented in this work are similar to the results for pure CoSb 3 materials reported in literature. 12,41,42 Therefore, it can be concluded that the applied manufacturing process allowed production of high-quality, pure, undoped base material for use in further studies.…”

Section: Resultssupporting

confidence: 90%

Microstructure and Thermoelectric Properties of Bulk Cobalt Antimonide (CoSb3) Skutterudites Obtained by Pulse Plasma Sintering

Kruszewski

Zybała

Ciupiński

et al. 2015

Journal of Elec Materi

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The use of the pulse plasma sintering technique for CoSb 3 thermoelectric material consolidation is reported in this work. The influence of sintering temperature on the microstructure and material properties such as the Seebeck coefficient, electrical resistivity, and thermal conductivity has been investigated. It is shown that, for samples fabricated at 923 K and 973 K, there were no significant differences in the average grain size or final phase composition. In both cases, a fine-grained polycrystalline structure of the compacts with density nearly equal to the theoretical value was achieved. Both samples were composed almost uniquely of CoSb 3 phase. The measured thermoelectric parameters such as the Seebeck coefficient, electrical, and thermal conductivity showed similar dependence on temperature. For both samples, the Seebeck coefficient was negative at room temperature and showed a transition from n-to p-type conduction over the temperature range of 400 K to 460 K. The measured minimum thermal conductivity values, 4 W m À1 K À1 to 5 W m À1 K À1 at 723 K, are typical for undoped bulk CoSb 3 . A maximum ZT value of 0.08 at 623 K was obtained for the sample consolidated at 923 K for 5 min. The results of this work are very promising from the point of view of use of pulse plasma sintering as an alternative method for fabrication of a broad range of thermoelectric materials in the future.

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Section: Resultssupporting

confidence: 90%

Microstructure and Thermoelectric Properties of Bulk Cobalt Antimonide (CoSb3) Skutterudites Obtained by Pulse Plasma Sintering

Kruszewski

Zybała

Ciupiński

et al. 2015

Journal of Elec Materi

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“…9 At present, there are only a few materials considered for applications above 800 K; e.g. p-type Si 80 Ge 20 with a maximum ZT = 0.6 at 873 K 10,11 ; nanostructured p-type Si 80 Ge 20 with enhanced ZT ∼ 0.95 around 1100K 12 ; n-type La 3−x Te 4 that can inherently be doped by controlling off-stoichiometry of the elements 13 ; the intermetallic p-type Yb 14 MnSb 11 14 which has a ZT of approximately 1 at 1200 K; and multifilled skutterudites with ZT ∼ 1.2 at 800-850 K. 15,16 PbSe, is also attractive for high-temperatures because it exhibits a monotonically increasing Seebeck coefficient even up to at least 1000 K, has a favorable electronic structure similar to that of PbTe and a lower lattice thermal conductivity at room temperature compared to PbTe. 17,18 Finally, Se is less expensive and ∼50 times more abundant than Te in the Earths crust.…”

Section: -8mentioning

confidence: 99%

High-temperature thermoelectric properties ofn-type PbSe doped with Ga, In, and Pb

Androulakis¹,

Lee²,

Todorov

et al. 2011

Phys. Rev. B

108

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We report a systematic study of the thermoelectric properties of PbSe doped with Ga, In and excess Pb as a function of carrier density and temperature. All metal dopants efficiently generate electron carriers in the crystal lattice with densities as high as ∼ 10 20 cm −3 measured by the Hall effect. The Seebeck coefficient as a function of carrier density at room temperature was found to be similar for all dopants, while at 700K substantial differences were observed with PbSe-In exhibiting a larger response. Infra-red spectral reflectivity measurements at room temperature showed that both Ga and In substitution in PbSe weakens the curvature of the dispersion relation of the conduction band compared to Pb. This electronic effect contributes a larger density of states in transport processes at high-temperatures. We have obtained thermoelectric figures of merit of ∼ 0.9 at 900K, exceeding that of PbTe for T>800K.

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“…One approach for recovering energy from the system is to generate electrical power through thermoelectric (TE) conversion using thermoelectric materials. Studies on thermoelectric materials have been flourishing recently, resulting in a large variety of materials with figure of merit zT ¼ a 2 T/rk (with a, k, and r being the Seebeck coefficient, thermal conductivity and electrical resistivity, respectively) exceeding 1, such as bismuth tellurides [1][2][3], skutterudites [4][5][6], Zinlt phases [7][8][9][10][11][12], lead tellurides [13][14][15], silicon germanium [16,17], zinc antimony [18], copper selenide [19], Cu-Se derivatives [20][21][22][23], (AgSbTe) 0. 15 (GeTe) 0.85 (TAGS) [24], AgPb m SbTe 2þm (LAST) [25], lanthanum telluride [26], and CuGaTe 2 [27].…”

mentioning

confidence: 99%

Towards high efficiency segmented thermoelectric unicouples

Ngan

Christensen

Snyder

et al. 2013

Physica Status Solidi (a)

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Segmentation of thermoelectric (TE) materials is a widely used solution to improve the efficiency of thermoelectric generators over a wide working temperature range. However, the improvement can only be obtained with appropriate material selections. In this work, we provide an overview of the theoretical efficiency of the best performing unicouples designed from segmenting the state-of-the-art TE materials. The efficiencies are evaluated using a 1D numerical model which includes all thermoelectric effects, heat conduction, Joule effects and temperature dependent material properties, but neglects contact resistance and heat losses. The calculations are performed for a fixed cold side temperature of 300 K and different hot side temperatures of 700, 900, and 1100 K. We confirm that without taking into account the compatibility of TE materials, segmentation can even decrease the total efficiency. Choosing the TE materials carefully, one is, however, rewarded by a significant improvement in the total efficiency.

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Multifilled nanocrystalline p-type didymium – Skutterudites with ZT>1.2

Cited by 103 publications

References 48 publications

Microstructure and Thermoelectric Properties of Bulk Cobalt Antimonide (CoSb3) Skutterudites Obtained by Pulse Plasma Sintering

Microstructure and Thermoelectric Properties of Bulk Cobalt Antimonide (CoSb3) Skutterudites Obtained by Pulse Plasma Sintering

High-temperature thermoelectric properties ofn-type PbSe doped with Ga, In, and Pb

Towards high efficiency segmented thermoelectric unicouples

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