Silicon
(Si) is a suitable absorber for constructing highly efficient
solar cells and photoelectrodes, because of its narrow band gap (1.12
eV), Earth abundance, and excellent optoelectronic property. When
it serves as photoanodes for solar water oxidation, Si corrodes continuously,
because of thermodynamically favorable anodic oxidation of Si surface
to SiO
x
and the subsequent dissolution
in alkaline electrolytes. The instability becomes the main bottleneck
that limits its further application, and thus stabilization of Si
under operation conditions constitutes a key step in developing an
integrated device for large-scale and practical PEC water splitting
systems. Although a variety of designs are currently being proposed
to create stable and efficient n-Si photoelectrodes,
a comprehensive understanding of the operation and failure mechanism
of these photoelectrodes is still lacking. Here, we outline the basic
principles and recent advancements of n-Si photoanodes
with different device configurations and discuss the merits and major
challenges of these protection strategies. Emphasis is placed on the
construction of a novel multifunctional protective layer that simultaneously
optimizes the charge carrier transport and corrosion resistance of n-Si photoelectrodes. Finally, a perspective regarding the
key challenges and future direction for the design of novel structures,
the engineering of the interface, the enhancement of stability, and
the utilization of advanced in situ techniques is also presented.