Multiferroic oxides-based flash memory and spin-field-effect transistor

Abstract

Fabrication and characteristics of P -channel silicon-oxide-nitride-oxide-silicon flash memory device based on bulk fin shaped field effect transistor structure

Tunneling anisotropic magnetoresistance of helimagnet tunnel junctions

“…These two factors and their interplay determine the size and the sign of TAMR. In particular, a linear dependence on the spiral helicity results in an electrically 11 tunable spin-orbit interaction 8 by means of the magnetoelectric coupling, and thus TAMR is electrically controllable accordingly.…”

“…Our interest is focused on helimagnetic multiferroic 9,10 . The topology of the local helical magnetic moments in these materials induces a resonant, momentum-dependent spin-orbit interaction 8 . The noncollinear magnetic order together with the induced spinorbit coupling result in uniaxial TAMR with a C 2v symmetry.…”

“…Here we show that TAMR is a distinctive feature of normal-metal/multiferroic/ferromagnetic heterojunctions with the particular advantage of being electrically controllable. The coexistence of coupled electric and magnetic order parameters in multiferroics 6 holds the promise of new opportunities for device fabrications 7,8 . Our interest is focused on helimagnetic multiferroic 9,10 .…”

Helical multiferroics for electric field controlled quantum information processing

“…Particulary advantageous is the high sensitivity of some MF compounds to external fields [26][27][28][29][30]. This allows us to steer, for instance, magnetic order with moderate electric fields opening thus the door for magnetoelectric spintronics and spin-based information processing with ultra low power consumption and dissipation [10,[23][24][25]. These prospects are fueled by advances in synthesis and nanofabrication which renders feasible versatile MF nano-and quantum structures with enhanced multiferroic coupling [2][3][4][5][6]31].…”

“…Intrinsic coupling between the order parameters, e.g., ferromagnetism (FM), ferroelectricity (FE), and/or ferroelasticity (for an overview we refer to Refs. [2][3][4][5][6][7][8][9][10][11][12][13][14][15][16][17][18][19][20][21]), allows for multifunctionality of devices with qualitatively new conceptions [10,[22][23][24][25]. Particulary advantageous is the high sensitivity of some MF compounds to external fields [26][27][28][29][30].…”