Abstract:Thin films of bismuth and iron oxides were obtained by atomic layer deposition (ALD) on the surface of a flexible substrate poly(4,4′‐oxydiphenylene‐pyromellitimide) (Kapton) at a temperature of 250°C. The layer thickness was 50 nm. The samples were examined by secondary‐ion mass spectrometry, and uniform distribution of elements in the film layer was observed. Surface morphology, electrical polarization, and mechanical properties were investigated by atomic force microscope, piezoelectric force microscopy, an… Show more
“…Oxidative degradation is more common in high temperature environments, so an alternative atmosphere is required to prevent a rapid reduction in film lifetime [ 39 ]. The probable structural components of the surface area of the substrate after the influence of ozone and temperature are shown in Figure 1 , then the process of decomposition of the precursors and the formation of Bi-O and Fe-O bonds take place [ 40 ]. Inert surfaces are modified in various ways by ultrasonication with UV ozone or KOH, this mechanism has also been tested on an inert HOPG (highly oriented pyrolytic graphite) surface [ 34 ].…”
Section: Resultsmentioning
confidence: 99%
“…As can be seen on XPS, the small thickness does not allow FeO x to crystallize, the crystalline phase is formed in conjunction with Bi-O during growth and over the course of a chemical reaction [ 40 ]. The additional peaks that appeared for the BFO film in the region of 420 eV are related to 4d electrons with spin orbital splitting 3/2 and 5/2.…”
The paper considers how a film of bismuth ferrite BiFeO3 (BFO) is formed on a polymeric flexible polyimide substrate at low temperature ALD (250 °C). Two samples of BFO/Polyimide with different thicknesses (42 nm, 77 nm) were studied. As the thickness increases, a crystalline BFO phase with magnetic and electrical properties inherent to a multiferroic is observed. An increase in the film thickness promotes clustering. The competition between the magnetic and electrical subsystems creates an anomalous behavior of the magnetization at a temperature of 200 K. This property is probably related to the multiferroic/polymer interface. This paper explores the prerequisites for the low-temperature growth of BFO films on organic materials as promising structural components for flexible and quantum electronics.
“…Oxidative degradation is more common in high temperature environments, so an alternative atmosphere is required to prevent a rapid reduction in film lifetime [ 39 ]. The probable structural components of the surface area of the substrate after the influence of ozone and temperature are shown in Figure 1 , then the process of decomposition of the precursors and the formation of Bi-O and Fe-O bonds take place [ 40 ]. Inert surfaces are modified in various ways by ultrasonication with UV ozone or KOH, this mechanism has also been tested on an inert HOPG (highly oriented pyrolytic graphite) surface [ 34 ].…”
Section: Resultsmentioning
confidence: 99%
“…As can be seen on XPS, the small thickness does not allow FeO x to crystallize, the crystalline phase is formed in conjunction with Bi-O during growth and over the course of a chemical reaction [ 40 ]. The additional peaks that appeared for the BFO film in the region of 420 eV are related to 4d electrons with spin orbital splitting 3/2 and 5/2.…”
The paper considers how a film of bismuth ferrite BiFeO3 (BFO) is formed on a polymeric flexible polyimide substrate at low temperature ALD (250 °C). Two samples of BFO/Polyimide with different thicknesses (42 nm, 77 nm) were studied. As the thickness increases, a crystalline BFO phase with magnetic and electrical properties inherent to a multiferroic is observed. An increase in the film thickness promotes clustering. The competition between the magnetic and electrical subsystems creates an anomalous behavior of the magnetization at a temperature of 200 K. This property is probably related to the multiferroic/polymer interface. This paper explores the prerequisites for the low-temperature growth of BFO films on organic materials as promising structural components for flexible and quantum electronics.
“…The bibliographic coupling of institutions is con-tradictory to the results presented in Table 7; i.e., the most influential institutions in terms of the number of publication outputs and citations do not imply the most influential in terms of bibliographic coupling. The observation may be attributed to high collaborations among these four institutions with the rest of the world (for instance, see the recent research of [85] with institutions from Romania, Russia, Iran and Czech Republic). For instance, although the Chinese Academy of Sciences is highly ranked in terms of publications and citations, it has lower bibliographic coupling than the University of Johannesburg (South Africa).…”
A bibliometric analysis of publications on fractal theory and thin films is presented in this article. Bibliographic information is extracted from the Web of Science digital database and the bibliographic mapping undertaken using VOSviewer software. Based on the analysis, there is a growing trend in research on the applications of fractal theory in thin film technology. The factors driving this trend are discussed in the article. The co-citation, co-authorship and bibliographic coupling among authors, institutions and regions are presented. The applications of fractal theory in thin film technology are clarified based on the bibliometric study and the directions for future research provided.
“…The sputtering process configuration is shown schematically in Figure 1. Despite all these deposition methods, many studies have considered the properties of thin films to be dependent on the structure and morphology of the films during the nucleation and growth processes, and the effect of various factors such as deposition pressure, deposition speed, substrate structure, substrate temperature have been investigated (Achour et al, 2017;Mansouri Majd et al, 2018;Oladijo et al, 2022;Ramazanov et al, 2022;Sousani et al, 2018).…”
Utilizing radio frequency magnetron sputtering, we successfully fabricated nickel oxide thin films with different thickness (from 80 to 270 nm), and conducted an in‐depth examination of their structural, morphological, optical, and electrical properties. The crystal structure and surface roughness were determined using x‐ray diffraction (XRD) and atomic force microscopy (AFM), respectively. The XRD analyses showed that the films were composed of cubic nickel oxide, exhibiting a notable orientation along the (200) direction. This crystal texture partially increased when the film thickness reached 270 nm. In addition, a direct correlation between film thickness and crystallite size was observed, with the latter increasing as the former did. AFM analysis provided insights into the surface morphology, revealing metrics like the bearing area, 3D surfaces intersections, and statistical properties of surface height. These insights underscore the relationship between film thickness and surface properties, which in turn influence the overall electrical, and prominently, optical properties of the films. Employing transmittance UV–visible spectroscopy, we characterized the optical behavior of these films, noting a proportional increase in refractive index with film thickness. Additionally, resistivity was observed to increase concomitantly with film thickness. In conclusion, the deposition process's film thickness acts as a pivotal parameter for fine‐tuning the structural, morphological, and optical properties of nickel oxide thin films. This knowledge paves the way for optimizing nickel oxide‐based devices across various applications.Research Highlights
We synthesized and characterized of p‐type semiconducting NiO thin films sputtered on substrates by using RF magnetron sputtering with different thickness.
Advanced crystalline structures and fractal features extracted from XRD and AFM analysis.
The 2D and 3D surface analysis of the samples indicates a complex structure with an imperfect self‐similarity that suggests a multifractal structure.
We represented graphically the relative representation of higher geometric objects in the AFM image.
We attributed the optical and electrical properties of the samples to the crystallite size, and the concurrent reduction in oxygen vacancies and crystalline defects within the films.
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