2009
DOI: 10.1016/j.mseb.2009.01.006
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Multiexcited state study in InAs DWELL structures

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Cited by 8 publications
(6 citation statements)
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“…(4) where M is the mass of the oscillator; then, it is clear that the Debye temperature, as well as parameter A, defines the lattice separation and deformation potential due to oscillation. Large values of the fitting parameters, are attributed to In/Ga interdiffusion during growth [16]; the interdiffusion process is responsible for changing the lattice separation. Full understanding of the interdiffusion mechanism and its effect on the thermodynamical parameters are essential for device fabrication based on the InAs QD structure [17][18][19][20].…”
Section: Resultsmentioning
confidence: 99%
“…(4) where M is the mass of the oscillator; then, it is clear that the Debye temperature, as well as parameter A, defines the lattice separation and deformation potential due to oscillation. Large values of the fitting parameters, are attributed to In/Ga interdiffusion during growth [16]; the interdiffusion process is responsible for changing the lattice separation. Full understanding of the interdiffusion mechanism and its effect on the thermodynamical parameters are essential for device fabrication based on the InAs QD structure [17][18][19][20].…”
Section: Resultsmentioning
confidence: 99%
“…Simultaneously the shift of GS PL peak to high energy in #5 with larger QD lateral sizes (Table 1) is the subsequence of essential compressive strain in this structure. Note that the compresive strain can stimulate the Ga/In inter-diffusion process in #1 and #5 that is accompained by the PL peak shift into high energy side as well (Fig.7) [63,64].…”
Section: Elastic Strain In Symmetric Inas Qd Structures With Differenmentioning
confidence: 91%
“…The ASIA ISNCSCI scores 13 were used for assessing and classifying the neurological level and extent of SCI and were assessed at injury baseline and after 4, 8, 16, 26, and 52 weeks.…”
Section: Methodsmentioning
confidence: 99%