Multidipping Technique for Fabrication Time Reduction and Performance Improvement of Solution‐Processed Single‐Walled Carbon Nanotube Thin‐Film Transistors

Abstract

Herein, a simple and effective technique, “multidipping technique,” is implemented to rapidly form random networks of single‐walled carbon nanotubes (SWCNTs) used as a channel material in solution‐processed thin‐film transistors (TFTs). The multidipping process consists of repetition of dipping a substrate into a dispersed semiconducting SWCNT solution and rinsing the substrate between each dipping process. Compared with the conventional dipping method, this technique reduces total deposition time required to form high‐quality SWCNT networks by more than half and simultaneously improves the electrical performances of SWCNT TFTs. These phenomena are also comprehensively analyzed with experiments and microscopic images of the channel region, which well show morphology of the SWCNT networks. It is believed that the low‐temperature process and facile deposition method of SWCNT networks can provide a guideline for high‐throughput fabrication of high‐performance SWCNT TFT arrays in flexible active matrix sensor array and display applications.

Retracted: Combined Printing of Highly Aligned Single‐Walled Carbon Nanotube Thin Films with Liquid Metal for Direct Fabrication of Functional Electronic Devices

“…We next examine the principal performance parameters of flexible CNT TFTs in the context of previously reported CNT TFT design trade-off relation-ships. [36][37][38][39][40][41][42][43][44][45][46][47][48][49][50][51][52][53][54][55] Figure 7a-c shows on/off ratios plotted as a function of normalized g m , V th , and parallel-plate field-effect mobility (µ), respectively. It can be clearly seen that the performance of our LM-CNT device exhibit R e t r a c t e d significantly higher transconductance and low-voltage operation while maintaining a large on/off ratio of >10 5 due to the combined high-conductance and flexibility.…”

Inkjet-Printing-Based Density Profile Engineering of Single-Walled Carbon Nanotube Networks for Conformable High-On/Off-Performance Thin-Film Transistors

“…This trend deviates largely from the previous correlation between the current-carrying capability and the leakage of SWCNT TFTs. Figure i compares the mobility and on/off ratio of SWCNT TFTs. ,− Previous SWCNT TFTs show a strong negative correlation between the mobility and on/off ratio where the on/off ratio exponentially decreases when the mobility increases. However, our DM-TFT with optimized conditions ( L LDC = 30 μm, ρ HDC = 71.2%) shows a much higher on/off ratio (>10 6 ) compared to those with similar mobility.…”

“…This strong trade-off between the current drive and leakage has limited the overall performance of most of the reported SWCNT TFTs. Therefore, so far, elaborate efforts have been reported to optimize the SWCNT density for the desired on-/off-state current levels using various deposition methods such as dip coating, − drop casting, aerosol jet printing, and inkjet printing. , …”

Sensors Based on the Carbon Nanotube Field-Effect Transistors for Chemical and Biological Analyses

“…Although different carbon nanotube field-effect transistors consist of different structures, they all contain similar structures: conductive channels, source, drain and gate electrodes at the top or bottom of the channel, as well as a dielectric layer that separates the gate and carbon nanotube between the channel and the gate [ 93 ]. The working principle is similar: the gate electrode uses a vertical electric field to control the charge in the channel.…”