Multicomponent fiber-optical gas sensor based on MIR tunable diode lasers

Stepanov, E. V.; Kouznetsov, Andrian I.; Zyrianov, Pavel V.; Плотниченко, В. Г.; Selivanov, Yu. G.; Artjushenko, V. G.

doi:10.1016/1350-4495(95)00108-5

Cited by 10 publications

(4 citation statements)

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“…Near-to-mid-infrared (IR) photodetection technologies have the potential to revolutionize the infrastructures of surveillance and manufacturing by enabling military or civil night vision, , environmental gas monitoring, and chemical spectroscopic analysis . However, current commercial IR photodetectors, particularly those with beyond 2000 nm spectral response, rely on expensive and size-limited epitaxial growth processes that are not compatible with silicon wafer technologies .…”

mentioning

confidence: 99%

Mercury Telluride Quantum Dot Based Phototransistor Enabling High-Sensitivity Room-Temperature Photodetection at 2000 nm

et al. 2017

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Near-to-mid-infrared photodetection technologies could be widely deployed to advance the infrastructures of surveillance, environmental monitoring, and manufacturing, if the detection devices are low-cost, in compact format, and with high performance. For such application requirements, colloidal quantum dot (QD) based photodetectors stand out as particularly promising due to the solution processability and ease of integration with silicon technologies; unfortunately, the detectivity of the QD photodetectors toward longer wavelengths has so far been low. Here we overcome this performance bottleneck through synergistic efforts between synthetic chemistry and device engineering. First, we developed a fully automated aprotic solvent, gas-injection synthesis method that allows scalable fabrication of large sized HgTe QDs with high quality, exhibiting a record high photoluminescence quantum yield of 17% at the photoluminescence peak close to 2.1 μm. Second, through gating a phototransistor structure we demonstrate room-temperature device response to reach >2 × 10 cm Hz W (at 2 kHz modulation frequency) specific detectivity beyond the 2 μm wavelength range, which is comparable to commercial epitaxial-grown photodetectors. To demonstrate the practical application of the QD phototransistor, we incorporated the device in a carbon monoxide gas sensing system and demonstrated reliable measurement of gas concentration. This work represents an important step forward in commercializing QD-based infrared detection technologies.

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confidence: 99%

Mercury Telluride Quantum Dot Based Phototransistor Enabling High-Sensitivity Room-Temperature Photodetection at 2000 nm

et al. 2017

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“…Recently, a kind of ENG material named dysprosium-doped cadmium oxide (CdO) was reported with a very flat material dispersion within the 4-5 µm range. Furthermore, there are many successful gas and liquid sensor systems operating in mid-infrared (MIR) region, which verifies the possibility of the proposed fiber sensor in this wavelength range [30,31]. Consequently, in this work, a novel MIR intensity demodulated ARF sensor is analyzed and demonstrated to achieve liquid analytes measurement in the RI range from 1.33 to 1.45, which covers the most liquid analytes RIs.…”

Section: Introductionmentioning

confidence: 65%

An intensity demodulated refractive index sensor based on a hollow-core anti-resonant fiber

Liu¹,

Yang²,

Zhang³

et al. 2022

J. Phys. D: Appl. Phys.

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A robust and simple mid-infrared hollow-core anti-resonant ﬁber (ARF) based refractive index (RI) sensor with an intensity demodulation method is presented and analyzed for monitoring liquid analytes. The ARF allows liquid analytes to ﬂow through its hollow area for detection. To obtain ideal sensing performance, an epsilon negative (ENG) material is introduced into the selected anti-resonant tube. With the high absorption of the ENG material, only one fundamental mode is available for detection and is sensitive to the RI variation of analytes. Moreover, the eﬀects of structural parameters on the sensing performances are discussed and analyzed to further understand the mechanism and optimization. The ﬁnal result shows that the ARF sensor can exhibit a high sensitivity of -372.58 dB/RIU at a ﬁxed wavelength within a broad RI range from 1.33 to 1.45, which covers most liquid analytes. It is a promising candidate for chemical and environmental analysis. Additionally, it has the potential for deep research to feed diverse applications.

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“…Optoelectronic thin film transistor (TFT) is an important fundamental component in various applications, including smart wearable products [1], lightweight sheet image scanner [2], remote sensing [3], active‐matrix flat‐panel displays [4], environmental monitoring [5] and memory devices [6]. Amorphous indium gallium zinc oxide (IGZO) which exhibits electron mobility as high as 10–50 cm 2 V −1 s −1 , good transparency and applicability for the low‐temperature process has potential to serve as active layer in TFT [7, 8].…”

Section: Introductionmentioning

confidence: 99%

PbS/IGZO hybrid structure photo‐field‐effect transistor with high performance

Meng

Wang

Ming

et al. 2018

Micro & Nano Letters

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To optimise the performance of photo-field-effect transistor, a back-gate hybrid structure was developed. In this hybrid phototransistor, lead sulphide (PbS) thin film was prepared using physical vapour deposition as a photosensitive layer. Discontinuous and uniform PbS film was obtained by controlling the deposition rate and time of PbS powders. Amorphous indium gallium zinc oxide (IGZO) with high mobility was used as an active layer. In this work, The hybrid structure phototransistor shows an excellent performance: device mobility (μ) reach 8.7 cm 2 V −1 s −1 , and responsivity achieve 2.7 × 10 4 A/W in visible spectrum and 5.7 A/W in near-infrared spectrum, respectively. Furthermore, the transistor exhibits detectivity up to 2.79 × 10 13 cmHz 1/2 W −1. The device also exhibits characteristics of the ideal diode: the saturation current of the diode is as small as 0.422 nA, and the responsivity of diode is ∼0.74 A/W. Simplified manufacturing processes effectively reduce the cost of fabricated device and provide better device stability.

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Multicomponent fiber-optical gas sensor based on MIR tunable diode lasers

Cited by 10 publications

References 0 publications

Mercury Telluride Quantum Dot Based Phototransistor Enabling High-Sensitivity Room-Temperature Photodetection at 2000 nm

Mercury Telluride Quantum Dot Based Phototransistor Enabling High-Sensitivity Room-Temperature Photodetection at 2000 nm

An intensity demodulated refractive index sensor based on a hollow-core anti-resonant fiber

PbS/IGZO hybrid structure photo‐field‐effect transistor with high performance

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