Multicolor Depth-Resolved Cathodoluminescence from Eu-Doped SiOC Thin Films

Abstract

A very bright room-temperature cathodoluminescence (CL) signal, tunable in the visible range by changing the Eu(2+) concentration, has been observed in Eu-doped SiOC films. Depth-resolved CL measurements demonstrate that a bilayer consisting of two SiOC films containing different Eu concentrations allows the continuous tuning of the Eu(2+) emission from blue to green by changing the energy of the exciting electrons. Furthermore, the proper control at the nanoscale of the electron penetration depth allows to obtain a high-quality white light emission. The compatibility of SiOC films with Si technology opens the way to promising applications of Eu-based materials in lighting and display technologies.

Pseudocapacitive Characteristics of Low-Carbon Silicon Oxycarbide for Lithium-Ion Capacitors

“…The atomic bonding inside the SiOC matrix consists only of Si−C and Si−O bonds. 2,55 The absence of Si−Si bonds, which leads to the dealloying reaction mechanism in LIBs, was proven by the absence of the Si−Si vibrational modes at 508 and 933 cm −1 in Raman spectra. 25 Figure 2a shows the galvanostatic charge/discharge curves of the LC-SiOC samples at a current density of 0.2 A g LC-SiOC −1 for 50 cycles.…”

Defect Emission and Optical Gain in SiCxOy:H Films

“…Progress has been recently made in understanding and optimizing light emission from Si-based materials, such as SiO x , SiN x , and SiN x O y . − A breakthrough in this field is the realization of optical gain and light amplification from SiO x -based material. − Owing to the difficulty of electrical injection in SiO x , silicon dioxide is commonly replaced with silicon nitride as a promising luminescent material for efficient electrical excitation. − Compared with silicon nitride, however, silicon oxynitride more effectively balances carrier injections in light-emitting devices, thus remarkably improving the probability of carrier recombination. , Extensive studies have recently focused on dielectric silicon oxycarbide (SiC x O y ) due to its efficient light emission and applicability in Si chips. SiC x O y , which is widely used as an interlayer dielectric to reduce parasitic capacitance and resistance capacitance (RC) delay in Si chips, generally features strong white light emission. − Moreover, a SiC x O y host matrix provides a remarkably higher solid solubility for rare earths, such as Eu and Er, compared with SiO 2 . , In addition, the SiC x O y matrix can also be used as a donor that contributes to the light emission of Eu 2+ ions via energy transfer . So far, defect states, such as C-related oxygen vacancies (C-NOVs), Si-NOVs, and Si-related oxygen deficiency centers, have been proposed to demonstrate the photoluminescence (PL) mechanism in SiC x O y . − Nikas et al recently reported that white light emission results from the band tail states related to the Si–O–C and/or Si–C bonds .…”

“…24−26 Moreover, a SiC x O y host matrix provides a remarkably higher solid solubility for rare earths, such as Eu and Er, compared with SiO 2 . 27,28 In addition, the SiC x O y matrix can also be used as a donor that contributes to the light emission of Eu 2+ ions via energy transfer. 29 So far, defect states, such as C-related oxygen vacancies (C-NOVs), Si-NOVs, and Si-related oxygen deficiency centers, have been proposed to demonstrate the photoluminescence (PL) mechanism in SiC x O y .…”

Hyper-stable organo-EuIII luminophore under high temperature for photo-industrial application

“…There has been significant interest in the development of luminescent lanthanide materials for use in devices such as fluorescent lamps 1 2 3 , LED lights 4 5 6 7 8 9 10 11 and displays 10 11 12 13 . Recently, we have focused on organo lanthanide luminophores with strong luminescent properties for a future energy saving measures 14 .…”