Multichannel Mueller matrix ellipsometer based on the dual rotating compensator principle

Chen, Chi; An, Ilsin; Ferreira, G. M.; Podraza, Nikolas J.; Zapien, Juan Antonio; Collins, R. W.

doi:10.1016/j.tsf.2003.11.191

Cited by 63 publications

(36 citation statements)

References 20 publications

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“…Third-party vendors installed three new hazardous gas cabinets and upgraded the hazardous gas plumbing for several other cabinets. This enabled the use of Si 2 H 6 , Si 3 H 8 , SiH 3 Cl and a highervolume H 2 cylinder (higher H 2 flow is required for nanocrystalline growth). The mass flow controllers were replaced to allow higher H 2 and lower B 2 H 6 flow.…”

Section: Facility Upgrades At Iec To Support This Programmentioning

confidence: 99%

“…This mechanism for Si* and SiH* is described as follows: The threshold electron energy to form SiH* is 10.5eV compared with Si* at 11.5eV [J. Perrin and J. F. M. Aarts, Chemical Physics, 80 (1983) 351-365]. These species are very small part (<0.1%) of the total species in SiH 4 plasma compared with the main deposition precursors SiH 3 and SiH 2 (nonradiative). Moreover, as is well known, H dilution of SiH 4 / Si 2 H 6 plasma will affect the film properties such as Rmf and H content of a-Si film and crystalline volume fraction of nc-Si.…”

Section: Part 3: Plasma Characterization Using Optical Emission Spectmentioning

confidence: 99%

See 1 more Smart Citation

Enhanced Growth Rate and Silane Utilization in Amorphous Silicon and Nanocrystalline-Silicon Solar Cell Deposition via Gas Phase Additives

Ridgeway¹,

Hegedus²,

Podraza³

2012

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Section: Facility Upgrades At Iec To Support This Programmentioning

confidence: 99%

Section: Part 3: Plasma Characterization Using Optical Emission Spectmentioning

confidence: 99%

Enhanced Growth Rate and Silane Utilization in Amorphous Silicon and Nanocrystalline-Silicon Solar Cell Deposition via Gas Phase Additives

Ridgeway¹,

Hegedus²,

Podraza³

2012

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“…Several MME designs have been developed to utilize continuously rotating polarizers or compensators in the polarization generation and/or detection arms of the instrument, i.e., the rotating-polarizer ellipsometer (RPE), the rotating-analyzer ellipsometer (RAE), and the rotating-compensator ellipsometer (RCE) [2][3][4] . However, the above designs require multiple measurements in different configurations to acquire the total of the Mueller matrix components and may be insufficient for real time characterization when studying optically anisotropic materials [5] . Therefore, an MME based on a PC r1 SC r2 A configuration, also called a dual-rotating compensator ellipsometer [6] , which can acquire all of the Mueller matrix components with just one measurement, has been widely used in recent years.…”

Section: Introductionmentioning

confidence: 99%

Reduction of measurement errors with two-channel configuration in the Mueller matrix ellipsometer

Liu

Zhang

et al. 2013

Eighth International Symposium on Precision Engineering Measurement and Instrumentation

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The random noise and the systematic errors caused by azimuthal errors of the optical elements, i.e., the polarizer, the analyzer, or the compensator, would lead to measurement errors in the Mueller matrix ellipsometer (MME). In this paper, we develop the two-channel MME of the optical configuration PC r1 SC r2 Wp by replacing the analyzer with a Wollaston prism. In the two-channel MME, two intensity spectra would be acquired simultaneously due to the separation and orthogonal polarization of two light beams by the Wollaston prism and are combined to deduce the Mueller matrix. Two figures of merit are derived to evaluate the effects of random noise and systematic errors on the Mueller matrix measurement, and numerical simulations demonstrate that the two-channel MME can give access to higher accuracy by reducing measurement errors due to random noise and systematic errors.

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“…Automatic ellipsometers can be divided into two categories: rotating polarizing component ellipsometers and phase-modulation ellipsometers. In the first category, systems with rotating polarizer, analyzer [10][11][12], and compensator [13,14] are widely used. In the second category, a photoelastic modulator (PEM) with modulation frequency typically 50 kHz is used as a phase modulator [15][16][17][18][19].…”

Section: Introductionmentioning

confidence: 99%

Null ellipsometer with phase modulation

Postava¹,

Maziewski²,

Yamaguchi³

et al. 2004

Opt. Express

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Abstract:A new null ellipsometer is described that uses photoelastic modulator (PEM). The phase modulation adds a good signal-to-noise ratio, high sensitivity, and linearity near null positions to the traditional high-precision nulling system. The ellipsometric angles ∆ and ψ are obtained by azimuth measurement of the analyzer and the polarizer-PEM system, for which the first and second harmonics of modulator frequency cross the zeros. We show that the null system is insensitive to ellipsometer misadjustment and component imperfections and modulator calibration is not needed. In addition, a fast ellipsometer mode for fine changes measurement of ellipsometric angles is proposed. 798-802 (1974). 6. M. Yamamoto, Y. Hotta, and M. Sato, "A tracking ellipsometer of picometer sensitivity enabling 0.1% sputteringrate monitoring of EUV nanometer multilayer fabrication," Thin Solid Films 433, 224-229 (2003). 7. H. Zhu, L. Liu, Y. Wen, Z. Lü, and B. Zhang, "High-precision system for automatic null ellipsometric measurement," Appl.

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Multichannel Mueller matrix ellipsometer based on the dual rotating compensator principle

Cited by 63 publications

References 20 publications

Enhanced Growth Rate and Silane Utilization in Amorphous Silicon and Nanocrystalline-Silicon Solar Cell Deposition via Gas Phase Additives

Enhanced Growth Rate and Silane Utilization in Amorphous Silicon and Nanocrystalline-Silicon Solar Cell Deposition via Gas Phase Additives

Reduction of measurement errors with two-channel configuration in the Mueller matrix ellipsometer

Null ellipsometer with phase modulation

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