Abstract:The "hydride" growth process is well established as a technique for producing high quality homoepitaxial layers of the common III-V binary materials. However, it is difficult to obtain abrupt heterointerfaces for example between Ga In As and In P, as the gas speed is generally slow in order for the gas to follow the desired temperature profile in its passage through the source to substrate. Thus under normal conditions, a change of composition will occur in a time corresponding to the growth of several thousan… Show more
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