Multibit Ferroelectric FET Based on Nonidentical Double HfZrO<sub>2</sub> for High-Density Nonvolatile Memory

Liao, C.-Y.; Hsiang, K.-Y.; Hsieh, Fan-Chun; Chiang, S.-H.; Chang, Shao Hsi; Liu, J.-H.; Lou, Chun-Che; Lin, Cheng-Hung; Chen, T.-C.; Chang, Chih‐Sheng; Lee, M. H.

doi:10.1109/led.2021.3060589

Cited by 47 publications

(14 citation statements)

References 13 publications

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“…This is a dramatic improvement over the endurance of FeFETs based on thick ferroelectric films or large memory windows reported so far. 11,16,32 The inset in Fig. 3(e) shows the endurance according to the capacitance ratio.…”

Section: Resultsmentioning

confidence: 99%

High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory

et al. 2022

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Section: Resultsmentioning

confidence: 99%

High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory

et al. 2022

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“…Ferroelectric FETs (FEFETs), in which the ferroelectric material is integrated within the gate stack of a transistor (Yu et al, 2021), offer appealing attributes that mitigate the concerns of FERAMs. For instance, FEFETs feature separation of read-write paths, non-destructive read, and high distinguishability while retaining the benefits of electric field-driven write (Yu et al, 2021) and offering other advantages such as multilevel storage (Ni et al, 2018;Dutta et al, 2020;Kazemi et al, 2020;Liao et al, 2021). However, they are known to suffer from variability, endurance, and retention concerns due to traps at the ferroelectric-dielectric interface and depolarization fields in the ferroelectric.…”

Section: Background Of Ferroelectric-based Memoriesmentioning

confidence: 99%

STeP-CiM: Strain-Enabled Ternary Precision Computation-In-Memory Based on Non-Volatile 2D Piezoelectric Transistors

Thakuria

Elangovan

Thirumala

et al. 2022

Front. Nanotechnol.

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We proposed 2D piezoelectric FET (PeFET)–based compute-enabled non-volatile memory for ternary deep neural networks (DNNs). PeFETs hinge on ferroelectricity for bit storage and piezoelectricity for bit sensing, exhibiting inherently amenable features for computation-in-memory of dot products of weights and inputs in the signed ternary regime. PeFETs consist of a material with ferroelectric and piezoelectric properties coupled with a transition metal dichalcogenide channel. We utilized (a) ferroelectricity to store binary bits (0/1) in the form of polarization (−P/+P) and (b) polarization-dependent piezoelectricity to read the stored state by means of strain-induced bandgap change in the transition metal dichalcogenide channel. The unique read mechanism of PeFETs enables us to expand the traditional association of +P (−P) with low (high) resistance states to their dual high (low) resistance depending on read voltage. Specifically, we demonstrated that +P (−P) stored in PeFETs can be dynamically configured in (a) a low (high) resistance state for positive read voltages and (b) their dual high (low) resistance states for negative read voltages, without afflicting a read disturb. Such a feature, which we named as polarization-preserved piezoelectric effect reversal with dual voltage polarity (PiER), is unique to PeFETs and has not been shown in hitherto explored memories. We leveraged PiER to propose a Strain-enabled Ternary Precision Computation-in-Memory (STeP-CiM) cell with capabilities of computing the scalar product of the stored weight and input, both of which are represented with signed ternary precision. Furthermore, using multi-word line assertion of STeP-CiM cells, we achieved massively parallel computation of dot products of signed ternary inputs and weights. Our array-level analysis showed 91% lower delay and improvements of 15% and 91% in energy for in-memory multiply-and-accumulate operations compared to near-memory design approaches based on 2D FET–based SRAM and PeFET, respectively. We also analyzed the system-level implications of STeP-CiM by deploying it in a ternary DNN accelerator. STeP-CiM exhibits 6.11× to 8.91× average improvement in performance and 3.2× average improvement in energy over SRAM-based near-memory design. We also compared STeP-CiM to near-memory design based on PeFETs showing 5.67× to 6.13× average performance improvement and 6.07× average energy savings.

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“…1,2 Because of these advantages, hafnium oxide-based ferroelectric materials have been widely used in memory applications. 3–5…”

Section: Introductionmentioning

confidence: 99%

“…1,2 Because of these advantages, hafnium oxide-based ferroelectric materials have been widely used in memory applications. [3][4][5] However, the wake-up and fatigue effects exhibited by ferroelectric HfO 2 during electrical cycling limit the application of HfO 2 in ferroelectric memory devices. 6,7 To effectively address this problem, a clear understanding of the underlying mechanisms is indispensable.…”

Section: Introductionmentioning

confidence: 99%

First direct observation of the built-in electric field and oxygen vacancy migration in ferroelectric Hf_0.5Zr_0.5O₂ film during electrical cycling

et al. 2023

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Multibit Ferroelectric FET Based on Nonidentical Double HfZrO₂ for High-Density Nonvolatile Memory

Cited by 47 publications

References 13 publications

High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory

High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory

STeP-CiM: Strain-Enabled Ternary Precision Computation-In-Memory Based on Non-Volatile 2D Piezoelectric Transistors

First direct observation of the built-in electric field and oxygen vacancy migration in ferroelectric Hf_0.5Zr_0.5O₂ film during electrical cycling

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Multibit Ferroelectric FET Based on Nonidentical Double HfZrO2 for High-Density Nonvolatile Memory

Cited by 47 publications

References 13 publications

High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory

High performance ferroelectric field-effect transistors for large memory-window, high-reliability, high-speed 3D vertical NAND flash memory

STeP-CiM: Strain-Enabled Ternary Precision Computation-In-Memory Based on Non-Volatile 2D Piezoelectric Transistors

First direct observation of the built-in electric field and oxygen vacancy migration in ferroelectric Hf0.5Zr0.5O2 film during electrical cycling

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Product

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About

Multibit Ferroelectric FET Based on Nonidentical Double HfZrO₂ for High-Density Nonvolatile Memory

First direct observation of the built-in electric field and oxygen vacancy migration in ferroelectric Hf_0.5Zr_0.5O₂ film during electrical cycling