Multianalyte biosensor based on pH-sensitive ZnO electrolyte–insulator–semiconductor structures

Abstract

Articles you may be interested inHydrogen ion-selective electrolyte-gated organic field-effect transistor for pH sensing Appl. Phys. Lett. 104, 193305 (2014); 10.1063/1.4878539Field-effect-based chemical sensing using nanowire-nanoparticle hybrids: The ion-sensitive metal-semiconductor field-effect transistor Appl. Phys. Lett. 102, 023501 (2013); 10.1063/1.4775579 Ion sensitivity of the flowerlike ZnO nanorods synthesized by the hydrothermal processMultianalyte electrolyte-insulator-semiconductor (EIS) sensors with a ZnO sensing membrane annealed on silicon substrate for use in pH sensing were fabricated. Material analyses were conducted using X-ray diffraction and atomic force microscopy to identify optimal treatment conditions. Sensing performance for various ions of Na þ , K þ , urea, and glucose was also tested. Results indicate that an EIS sensor with a ZnO membrane annealed at 600 C exhibited good performance with high sensitivity and a low drift rate compared with all other reported ZnO-based pH sensors. Furthermore, based on well-established pH sensing properties, pH-ion-sensitive field-effect transistor sensors have also been developed for use in detecting urea and glucose ions. ZnO-based EIS sensors show promise for future industrial biosensing applications. V C 2014 AIP Publishing LLC. [http://dx.

Highly Sensitive Magnesium-Doped ZnO Nanorod pH Sensors Based on Electrolyte–Insulator–Semiconductor (EIS) Sensors

“…The change in the reference voltage might occur from lattice defects, which co for example, vacancies or dangling bonds caused by capturing groups of ions. The fects might be eliminated by controlling the parameters of the preparation method for the sensing membranes, such as the annealing temperature [15,27,73] and the d process [33,67], which result in the improvement of the drift voltage over time. In to study the long-term stability (drift) of the sensing membranes, each sample wa merged in a solution of pH 7 for 12 h. Figure 10 presents the drift rates of the EIS d based on Mg-doped ZnO nanorod sensing membranes doped at different contents ( Figure 10 shows that, among the samples doped with Mg, the EIS device with the 3 ZnO membrane exhibited the highest stability (0.218 mV/h), whereas the 2% M membrane had the lowest stability of 0.659 mV/h.…”

“…The smaller dimensions of nanowires/nanorods result in integration with very large contact surfaces and strong binding with biological and chemical reagents, making them perfect candidates for constructing functional devices [22]. They have been used widely in different types of applications due to their easy fabrication methods, biocompatibility, chemical stability, and important optical features, and could be utilised as transducers in the construction of biosensors [23][24][25][26][27]. Therefore, ZnO has been proven to be a pH-sensitive gate insulator for different types of sensors, such as EGFET [28,29], ISFET [30], LAPS [31], and EIS [19,20,27,32,33].…”

NH3 Plasma-Treated Magnesium Doped Zinc Oxide in Biomedical Sensors with Electrolyte–Insulator–Semiconductor (EIS) Structure for Urea and Glucose Applications

“…The sensing membranes were used to accurately measure those values. [46], ZO [47], Sm 2 O 3 [48], Ti-doped ZO [49], and CeO treated with CF 4 plasma [50]. According to our previous study on zinc oxide (ZO) [47], the pH-sensing sensitivity of the ZO as-deposited film and the annealed film at 600 • C were 33.15 and 42.54 mV/pH, respectively; and the hysteresis voltages of the above ZO films were 35.10 and 7.37 mV, respectively.…”

“…[46], ZO [47], Sm 2 O 3 [48], Ti-doped ZO [49], and CeO treated with CF 4 plasma [50]. According to our previous study on zinc oxide (ZO) [47], the pH-sensing sensitivity of the ZO as-deposited film and the annealed film at 600 • C were 33.15 and 42.54 mV/pH, respectively; and the hysteresis voltages of the above ZO films were 35.10 and 7.37 mV, respectively. By the way, the sensitivity of glucose and urea measurement of the ZO as-deposited film were 3.14 and 1.81 mV/mM, respectively.…”

Zinc oxide and gold textured Janus nanowire integration in an impedimetric sensor for leptospirosis DNA‐biomarker recognition

“…Among various metal oxides proposed, zinc oxide (ZnO) has received the priority of choice among researchers for developing a thin film due to its large binding energy (60 meV) and a large bandgap (3.37 eV) 14,15 . Owing to the large binding energy and bandgap, they can ensure that the electrical stability and performance are at an optimized state.…”