Multi-wavelength mid-IR light source for gas sensing

Karioja, Pentti; Alajoki, Teemu; Cherchi, Matteo; Ollila, Jyrki; Harjanne, Mikko; Heinilehto, Noora; Suomalainen, Soile; Viheriälä, Jukka; Zia, Nouman; Guina, Mircea; Buczyński, Ryszard; Kasztelanic, Rafał; Kujawa, Ireneusz; Salo, Tomi; Virtanen, Seppo; Kluczynski, Pawel; Sagberg, Håkon; Ratajczyk, Marcin; Kalinowski, Przemyslaw

doi:10.1117/12.2249126

Cited by 7 publications

(1 citation statement)

References 3 publications

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“…For instance, emitters in the 2.35–2.6 μm range are useful for sensing temperature and gas molecules such as CO, H 2 O, SO 2 , and HF. − These applications call for broadband emitters such as light emitting diodes (LEDs), particularly for spectroscopic detection of these critical gases generated in a chemical plant or for their atmospheric monitoring. , The commercially available LEDs emitting at the 2–5 μm wavelength range are dominated by III–V compound semiconductors. − The III–V LEDs that exhibit an emission peak below 2.35 μm are predominately made of GaInAsSb/AlGaAsSb, whereas InAsSb/InAsSbP is used for those emitting above 2.6 μm. − However, these III–V devices suffer an inherent emission gap in the 2.35–2.6 μm range due to material limitations . Additionally, the III–V LEDs emitting at wavelengths longer than 2.6 μm exhibit significantly lower output power if operated in continuous wave mode as compared to pulse mode. , Although GaSb-based lasers and superluminescent LEDs possess higher tunability of the emitted wavelength, − their narrow band emission remains less favorable for spectroscopic gas detection. , Notwithstanding the progress in developing III–V LEDs, these materials remain costly, and their direct growth on silicon is typically associated with a degradation of device performance, thus hindering their integration in large-scale applications.…”

Section: Introductionmentioning

confidence: 99%

Continuous-Wave GeSn Light-Emitting Diodes on Silicon with 2.5 μm Room-Temperature Emission

Atalla,

Assali,

Daligou

et al. 2024

ACS Photonics

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Silicon-compatible short- and midwave infrared emitters are highly sought after for on-chip monolithic integration of electronic and photonic circuits to serve a myriad of applications in sensing and communication. Commercially available infrared light-emitting diodes (LEDs) are predominantly made of III–V materials, which are costly and not silicon-compatible. These materials suffer a degraded performance if the emitting wavelength is longer than 2.35 μm. To address this long-standing challenge, GeSn semiconductors have been proposed as versatile building blocks for silicon-integrated optoelectronic devices. In this regard, this work demonstrates LEDs consisting of a vertical PIN double heterostructure p-Ge0.94Sn0.06/i-Ge0.91Sn0.09/n-Ge0.95Sn0.05 grown epitaxially on a silicon wafer using a germanium interlayer and multiple GeSn buffer layers. The emission from these GeSn LEDs at variable diameters in the 40–120 μm range is investigated under both DC and AC operation modes. The fabricated LEDs exhibit room temperature emission in the extended short-wave range centered around 2.5 μm under an injected current density as low as 45 A/cm2. By comparing the photoluminescence and electroluminescence signals, it is demonstrated that the LED emission wavelength is not affected by the device fabrication process or heating during the LED operation. Moreover, the measured optical power was found to increase monotonically as the duty cycle increases, indicating that the DC operation yields the highest achievable optical power. The LED emission profile and bandwidth are also presented and discussed.

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Section: Introductionmentioning

confidence: 99%

Continuous-Wave GeSn Light-Emitting Diodes on Silicon with 2.5 μm Room-Temperature Emission

Atalla,

Assali,

Daligou

et al. 2024

ACS Photonics

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Multimode Absorption Spectroscopy for Multispecies Trace Gas Sensing

Ewart

2019

Encyclopedia of Analytical Chemistry

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The technique of multimode absorption spectroscopy (MUMAS) is reviewed in the context of laser‐based methods for gas sensing of multiple species. The principles and practical implementation of the method are outlined with examples of applications using lasers with outputs in spectral ranges from the visible to the mid‐infrared, including interband cascade lasers (ICLs) and quantum cascade lasers (QCLs). The advantages and limitations of MUMAS are considered relative to other laser‐based methods, and potential future developments and applications are suggested.

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High power GaInNAs superluminescent diodes emitting over 400 mW in the 1.2 μm wavelength range

Aho

Viheriälä

Virtanen

et al. 2019

Applied Physics Letters

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A high-power superluminescent diode emitting over 400 mW in the 1.2 μm range is reported. The active region is based on a single GaInNAs/GaAs quantum well positioned within a low-confinement vertical waveguide and a lateral ridge waveguide geometry, ensuring single transverse mode operation. The peak wall-plug efficiency and the differential efficiency in the linear region were 22.8% and 0.38 W/A, respectively. The full width at half-maximum spectral width for the maximum output power was 22 nm, corresponding to a spectral power density of 19 mW/nm, a threefold increase compared to continuous wave superluminescent diodes based on a quantum dot active region operating in the same wavelength range. Besides exhibiting excellent optical and electrical properties, the GaInNAs active region enhances operation at elevated temperatures. In this respect, an output power of about 210 mW is demonstrated at operation temperatures as high as 60 °C, while 150 mW is still emitted at 70 °C. The unique combination of parameters demonstrated makes these GaInNAs QW-based superluminescent diodes particularly attractive for hybrid integration with silicon photonic circuitry, enabling the demonstration of compact solutions for sensing, optical coherence tomography, and other emerging concepts exploiting photonic integration technology and requiring single transversal mode operation, good efficiency, broadband high spectral power density, and uncooled operation at elevated temperatures.

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Multi-wavelength mid-IR light source for gas sensing

Cited by 7 publications

References 3 publications

Continuous-Wave GeSn Light-Emitting Diodes on Silicon with 2.5 μm Room-Temperature Emission

Continuous-Wave GeSn Light-Emitting Diodes on Silicon with 2.5 μm Room-Temperature Emission

Multimode Absorption Spectroscopy for Multispecies Trace Gas Sensing

High power GaInNAs superluminescent diodes emitting over 400 mW in the 1.2 μm wavelength range

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