Multi-type quantum dots photo-induced doping enhanced graphene/semiconductor solar cell

Wu, Jianghong; Feng, Sirui; Wu, Zhanjun; Lu, Yanghua; Lin, Shisheng

doi:10.1039/c7ra05646j

Cited by 11 publications

(4 citation statements)

References 32 publications

(17 reference statements)

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“…The working lifetime can be properly improved by choosing graphene as the metal material, which is outstanding not only because of its high conductive but also the high mechanical physical properties (12)(13)(14)(15)(16)(17). Actually, static graphene/semiconductor van der Waals heterostructure based solar cells (18)(19)(20)(21)(22), self-driven photodetectors (23)(24)(25) and water flow nanogenerator (26)(27)(28)(29) have been proposed. Compared with metal, graphene film has the unique advantage of high flexibility and durability, which promises the graphene film/silicon moving Schottky diode generator working well after 10000 runs back and forth.…”

Section: Mainmentioning

confidence: 99%

A High Current Density Direct‐Current Generator Based on a Moving van der Waals Schottky Diode

et al. 2018

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nanogenerator can only output alternating current and the output current density is quite small (0.01-0.1 A m −2 ), [5] which limits its widespread applications. [6] Recently, the vertical movement between the metal and semiconducting polymer has been demonstrated to output intermittent current peaks with low current density (2.7-62.4 µA cm −2 ), [7] where the metal contacts with polymer periodically. On the other hand, the microscale direct current generator based on sliding between metal tip and semiconductor has been demonstrated, [8] where the mechanism was ascribed to the triboelectric effect. However, the mechanism of triboelectric effect is confusing, [9] as the fundamental physical mechanism of the charge transfer process during friction is not solved. [6,10] Herein, we have demonstrated a macroscale direct-current generator through a moving van der Waals Schottky diode by dynamically moving graphene or metal film over Si or GaAs substrates. The mechanism of the moving Schottky diode generator is based on the built-in electric field separation of the diffusing carriers emitted by the appearance and disappearance of the depletion layer in moving Schottky diode. The working lifetime and flexibility can be properly improved by choosing graphene as the metal material, which is outstanding not only because of its high conductive but also the high mechanical physical properties. [11,12] Actually, static graphene/semiconductor van der Waals heterostructure-based solar cells, [13] self-driven photodetectors, [14] and water flow nanogenerator [15] have been proposed. Compared with metal, graphene film has the unique advantage of high flexibility and durability, which promises the graphene film/ silicon moving Schottky diode generator working well after 10 000 runs back and forth. The persistent direct-current generating ability firmly demonstrates that the physical mechanism of the moving Schottky diode generator is not caused by the triboelectricity. Instead, we uniquely propose that the dynamic disappearance and establishment of Schottky junction during the movement between graphene/metal and semiconductors is the origin of the direct current output. The proposed mechanism is self-consistent and can well explain the systematic experiments presented herein. This moving Schottky diode direct-current generator can light up a blue light-emitting diode (LED) and a flexible graphene wristband is demonstrated for the first time. Under the guidance of the mechanism, we achieved a currentdensity output up of ≈40 A m −2 through minimizing the contact Traditionally, Schottky diodes are used statically in the electronic information industry while dynamic or moving Schottky diode-based applications are rarely explored. Herein, a novel Schottky diode named "moving Schottky diode generator" is designed, which can convert mechanical energy into electrical energy by means of lateral movement between the graphene/metal film and semiconductor. The mechanism is based on the built-in electric field separation of the diffusing carr...

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Section: Mainmentioning

confidence: 99%

A High Current Density Direct‐Current Generator Based on a Moving van der Waals Schottky Diode

et al. 2018

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“…Graphene was transferred by wet etching. Cr/Au (5/50 nm) electrodes were thermally deposited to back GaAs which was gradually treated with several chemical agents [16], then graphene was transferred to the clean GaAs, and PMMA was removed. After annealing, front electrode was fabricated.…”

Section: Methodsmentioning

confidence: 99%

“…For instance, Au NPs have been designed to improve the performance of graphene-based solar cells due to the LSPR effect of Au NPs in the visible range [13,15]. On the other hand, various QDs such as Si, InP, CdSe and ZnO have been fabricated to enhance the performance of graphenebased devices due to the adjustable Fermi level of graphene [16][17][18]. In fact, these two approaches to enhance graphene device are compatible.…”

Section: Introductionmentioning

confidence: 99%

A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector

Qiu

Feng

et al. 2019

Nanotechnology

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Photodetectors based on graphene/GaAs heterostructure were fabricated and demonstrated for application in self-powered photodetection. Then, Si quantum dots (QDs) were spin-coated onto the surface of the devices to enhance the built-in field by photo-induced doping, because of the tunable Fermi level (EF) of graphene and shallow junction of the heterojunction. Additionally, Au nanoparticles working as a light trapping structure were used to the enhance quantum efficiency of the Si QDs and the optical absorption of the heterojunction, benefitting from localized surface plasmon resonance. Therefore, a large-area photodetector under self-powered conditions achieved a high performance i.e. responsivity (1.81 × 105 V W−1), detectivity (2.0 × 1012 Jones), fast response speed (<0.04 ms), and on–off ratio (6 × 103). The high voltage responsivity opens a promising pathway to ultra-weak light detection, and facilities the development of novel sensors.

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“…[ 6,8 ] Therefore, the graphene/semiconductor heterojunction based solar cells have been a hot topic in recent years. [ 9–16 ]…”

Section: Introductionmentioning

confidence: 99%

High‐Performance Graphene/GaInP Solar Cell Prepared by Interfacial Chemical Modification with Poly(3,4‐Ethylenedioxythiophene):Poly(styrenesulfonate)

Zhang

et al. 2021

Energy Tech

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Graphene/semiconductor heterojunction based solar cell is realized as a promising candidate for high‐efficiency solar cells. However, the interface between graphene and the semiconductor should be further explored to enhance the performance of the solar cell. As graphene is impermeable to water and gases, encapsulating hole conducting organic material poly(3,4‐ethylene‐dioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) at the interface is possible and can improve the surface passivation, p‐dope graphene, increase the barrier height, and speed up the transfer of carriers. Herein, a novel graphene/PEDOT:PSS/GaInP organic/inorganic Schottky heterojunction solar cell is designed and assembled via interfacial chemical modification. The cell exhibits an open‐circuit voltage (Voc) of 0.90 V under AM1.5 illumination, while the counterpart solar cell without PEDOT:PSS interlayer only gives a Voc of 0.49 V. In comparison with the PEDOT:PSS interlayer, indium tin oxide (ITO) film shows little effect on the improvement of Voc. The Voc of graphene/ITO/GaInP and ITO/PEDOT:PSS/GaInP solar cells is 0.11 and 0.37 V, respectively. As a result, the power conversion efficiency (PCE) of the Schottky junction solar cell with an interlayer reaches up to 4.55%, more than seven times that obtained without interlayer. The work has proven that integrating graphene/semiconductor heterostructure solar cells with organic conductive materials in the interface can achieve high PCE.

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Multi-type quantum dots photo-induced doping enhanced graphene/semiconductor solar cell

Cited by 11 publications

References 32 publications

A High Current Density Direct‐Current Generator Based on a Moving van der Waals Schottky Diode

A High Current Density Direct‐Current Generator Based on a Moving van der Waals Schottky Diode

A synergetic enhancement of localized surface plasmon resonance and photo-induced effect for graphene/GaAs photodetector

High‐Performance Graphene/GaInP Solar Cell Prepared by Interfacial Chemical Modification with Poly(3,4‐Ethylenedioxythiophene):Poly(styrenesulfonate)

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