Multi-Trigger Resist for EUV lithography

Abstract

Irresistible Materials (IM) is developing a photoresist based on the multi-trigger concept, which is designed to suppress roughness using a new photoresist mechanism incorporating a dose dependent quenching-like behaviour, and which is based on high EUV absorbance molecular, rather than polymeric, materials to maximise resolution. The latest results using the NXE Scanner are discussed here. The second generation (MTR Gen 2) of MTR incorporates more optimised crosslinker and photoacid generator molecules to tune the reaction rates in the multi-trigger mechanism. We have shown that the dose requirement compared to the first generation (MTR Gen1) of high opacity MTR resists previously presented can be significantly reduced without detriment to LWR or resolution. Lines and Spaces at p28 nm can be patterned at doses from 20 mJ/cm 2 to 50 mJ/cm 2 dependent on formulation ratio, with optimum LWR (3.95 nm, biased) occurring at 32 mJ/cm 2 , CD 12.1nm, in a MTR Gen2.4 formulation. Similarly, we present p34 & p36 pillars patterned between 20 mJ/cm 2 and 60 mJ/cm 2 doses for 17 nm diameter pillars, with a minimum LCDU for 18 nm diameter p36 pillars of 3.6 nm at 45 mJ/cm 2 (MTR Gen2.4).