Multi-Throw SPNT Circuits Using Phase-Change Material RF Switches for 5G and Millimeter Wave Applications

Slovin, Greg; El-Hinnawy, Nabil; Masse, Chris; Rose, Jefferson; Howard, David

doi:10.1109/ims19712.2021.9574818

Cited by 6 publications

(7 citation statements)

References 15 publications

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“…High resistivity and melting point are essential properties for dielectric layer materials to ensure effective insulation and thermal stability. Furthermore, research indicates that AlN with its high thermal conductivity, plays a beneficial role in enhancing switch speed and reducing DC drive power consumption [ 94 ].…”

Section: Gete-based Phase-change Switches (Pcss) For Rf Applicationmentioning

confidence: 99%

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

Qu,

Gao,

Wang

et al. 2024

Micromachines

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The global demand for radio frequency (RF) modules and components has grown exponentially in recent decades. RF switches are the essential unit in RF front-end and reconfigurable systems leading to the rapid development of novel and advanced switch technology. Germanium telluride (GeTe), as one of the Chalcogenide phase-change materials, has been applied as an RF switch due to its low insertion loss, high isolation, fast switching speed, and low power consumption in recent years. In this review, an in-depth exploration of GeTe film characterization is presented, followed by a comparison of the device structure of directly heated and indirectly heated RF phase-change switches (RFPCSs). Focusing on the prototypical structure of indirectly heated RFPCSs as the reference, the intrinsic properties of each material layer and the rationale behind the material selection is analyzed. Furthermore, the design size of each material layer of the device and its subsequent RF performance are summarized. Finally, we cast our gaze toward the promising future prospects of RFPCS technology.

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Section: Gete-based Phase-change Switches (Pcss) For Rf Applicationmentioning

confidence: 99%

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

Qu,

Gao,

Wang

et al. 2024

Micromachines

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“…14, and a DC-67 GHz T-type switch shown in Fig. 15 from the University of Waterloo [38], [39], [65], [68], and TowerSemi's various DC-40 GHz SPnT switches monolithically integrated with SiGe BiCMOS process [69] as depicted in Fig. 16.…”

Section: Phase Change Rf Switchesmentioning

confidence: 99%

“…The printed VO 2 switches are also used in multiple printed reconfigurable antenna design on hard (glass) and soft substrate (Kapton) [50], [69], [70], [71]. For instance, Su et al shown first a fully inkjet-printed reconfigurable PIFA antenna using VO 2 switches which is also assessed for its flexibility on antenna performance [50], [69]. The antenna is designed on 50 μm thick Kapton substrate ( = 3, σ = 0.003 at 1 GHz) that is fed by 50 Ohm coplanar waveguide line.…”

Section: Reconfigurable Antennasmentioning

confidence: 99%

Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials

et al. 2023

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Chalcogenide Phase Change Materials (PCM) and metal insulator transition (MIT) materials are a group of materials that are capable of switching between low resistance and high resistance states. These emerging materials have been widely used in optical storage media and memory devices. Over the past recent years, there have been interests in exploiting the PCM and MIT materials, especially germanium antimony telluride (GST) alloys and vanadium dioxide (VO 2 ), for radio frequency (RF) applications. The PCM and MIT-based RF devices are expected to bridge the gap between semiconductor switches and microelectromechanical system (MEMS) switches as they combine the low insertion loss performance of MEMS technology and the small size and reliability performance of semiconductor technology. This article presents an overview of the PCM and MIT materials for RF circuits and discusses the recent advancements in reconfigurable millimeter-wave (mmWave) devices based on PCM and MIT materials in depth.

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“…This challenge arises from the congestion in the radio-frequency (RF) spectrum, encompassing the electromagnetic frequencies employed in wireless communication [1][2][3] . This is especially problematic as frequencies are scaled beyond the spectrum allocated for 5 G (3)(4)(5)(6), where RF silicon-on-insulator switches exhibit unacceptably high loss when utilized in switched filter banks 4,5 . For example, the FR3 band from 7.125 to 24.25 GHz under exploration for 6 G networks will require extensive innovations in both RF switch 4,6 and acoustic filter [7][8][9][10] technologies if it is to adopt the massively parallel switched acoustic filter banks utilized in 4 G and 5 G networks.…”

mentioning

confidence: 99%

“…This is especially problematic as frequencies are scaled beyond the spectrum allocated for 5 G (3)(4)(5)(6), where RF silicon-on-insulator switches exhibit unacceptably high loss when utilized in switched filter banks 4,5 . For example, the FR3 band from 7.125 to 24.25 GHz under exploration for 6 G networks will require extensive innovations in both RF switch 4,6 and acoustic filter [7][8][9][10] technologies if it is to adopt the massively parallel switched acoustic filter banks utilized in 4 G and 5 G networks. As compared to the traditional implementation of a switched filter-bank, a single tunable filter has great potential to reduce the system cost, size, complexity, and remove entirely the additional switch paths loss 2,[11][12][13] .…”

mentioning

confidence: 99%

Frequency tunable magnetostatic wave filters with zero static power magnetic biasing circuitry

Du,

Idjadi,

Ding

et al. 2024

Nat Commun

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A single tunable filter simplifies complexity, reduces insertion loss, and minimizes size compared to frequency switchable filter banks commonly used for radio frequency (RF) band selection. Magnetostatic wave (MSW) filters stand out for their wide, continuous frequency tuning and high-quality factor. However, MSW filters employing electromagnets for tuning consume excessive power and space, unsuitable for consumer wireless applications. Here, we demonstrate miniature and high selectivity MSW tunable filters with zero static power consumption, occupying less than 2 cc. The center frequency is continuously tunable from 3.4 GHz to 11.1 GHz via current pulses of sub-millisecond duration applied to a small and nonvolatile magnetic bias assembly. This assembly is limited in the area over which it can achieve a large and uniform magnetic field, necessitating filters realized from small resonant cavities micromachined in thin films of Yttrium Iron Garnet. Filter insertion loss of 3.2 dB to 5.1 dB and out-of-band third order input intercept point greater than 41 dBm are achieved. The filter’s broad frequency range, compact size, low insertion loss, high out-of-band linearity, and zero static power consumption are essential for protecting RF transceivers from interference, thus facilitating their use in mobile applications like IoT and 6 G networks.

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Multi-Throw SPNT Circuits Using Phase-Change Material RF Switches for 5G and Millimeter Wave Applications

Cited by 6 publications

References 15 publications

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

A Review on Material Selection Benchmarking in GeTe-Based RF Phase-Change Switches for Each Layer

Recent Advancements in Reconfigurable mmWave Devices Based on Phase-Change and Metal Insulator Transition Materials

Frequency tunable magnetostatic wave filters with zero static power magnetic biasing circuitry

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