Multi-terminal electronic transport in boron nitride encapsulated TiS<sub>3</sub> nanosheets

Papadopoulos, Nikos; Flores, Eduardo; Watanabe, Kenji; Taniguchi, Takashi; Ares, J.R.; Sánchez, Carlos; Ferrer, Isabel J.; Castellanos-Gómez, Andrés; Steele, Gary A.; Zant, Herre S. J. van der

doi:10.1088/2053-1583/ab4ef3

Cited by 16 publications

(11 citation statements)

References 41 publications

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“…It is worth pointing out that a theoretical study of the injection of carriers through electric field gating in single layers of TiS 3 , where electrons are injected into the same type of band that we are discussing, indeed predicted the possibility of CDW-type anomalies . Later, experimental work reported transport measurements suggesting CDW formation, although a more complete characterization is still needed. − …”

Section: Results and Discussionmentioning

confidence: 63%

Rich Polymorphism of Layered NbS₃

et al. 2021

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Layered group V transition-metal trichalcogenides are paradigmatic low-dimensional materials providing an ever increasing series of unusual properties. They are all based on the same basic building units, one-dimensional MX 3 (M = Nb, Ta; X = S, Se) trigonal-prismatic chains that condense into layers, but their electronic structures exhibit significant differences leading to a broad spectrum of transport properties, ranging from metals with one, two, or three charge density wave instabilities to semimetals with potential topological properties or semiconductors. The different physical and chemical properties are shown to be related with subtle structural differences within the layers that result in half-, third-, or quarter-filled quasi-one-dimensional Nb d z 2 -type bands, providing a clear-cut illustration of the intimate link between structural and electronic features within a family of solids. An interesting yet not sufficiently explored feature of these solids is the polymorphism. Based on both experimental and new theoretical results, we examine this aspect for NbS 3 and show that at least seven different polymorphs with a stability compatible with the presently known phases of this compound are possible. We discuss a simple rationale for the physical properties of the presently known polymorphs as well as predictions for those that have still not been characterized or prepared. It is argued that some of the presently unknown polymorphs may have been prepared in an uncontrolled way as mixtures of different phases which could not be structurally characterized. The rich landscape of structures and properties found for this van der Waals material is suggested to represent an ideal platform for the preparation of flakes with finetuned properties for applications in new electronic and optoelectronic devices.

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Section: Results and Discussionmentioning

confidence: 63%

Rich Polymorphism of Layered NbS₃

et al. 2021

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“…Our argument is based on the data given by Lipatov et al [43] who reported mobilities of nanowhiskers between 18 and 24 cm 2 /(V·s) on Si/SiO 2 at room temperature, which increase up to 43 cm 2 /(V·s) on Al 2 O 3 . Recent data by Papadopoulos et al contain measurements of around 250 cm 2 /(V·s) encapsulated in hexagonal boron nitride (hBN) at 90 K [44]. Deposited samples of graphene [45] and MoS 2 [46] on this material showed comparable mobilities as those of Table 1.…”

Section: Electron Mobilitiesmentioning

confidence: 79%

Strain engineering of the electronic and thermoelectric properties of titanium trisulphide monolayers

Saiz

Rurali

2020

Nano Ex.

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The goal of this work is to evaluate the effect of mechanical strain on a number of electronic and thermoelectric properties of TiS 3 monolayers. We have used density-functional theory (DFT) calculations at the hybrid HSE06 level to evaluate the response of the electronic band gap and mobilities, as well as the thermopower, the electrical conductivity, the electronic contribution to the thermal conductivity and the power factor. Our calculations indicate that the band gaps can be increased by 44.25%, reaching a value of 1.55 eV from that of the undeformed case of 1.07 eV. The behaviour of HSE06 band gaps agrees well with that calculated at the G 0 W 0 level of theory. We evaluate the variation of electron mobilities with strain and discuss the possible causes of the existent disagreement between experiments and simulations. In addition, our calculations predict small changes in the Seebeck coefficient, whose S y component can be enhanced by up to 11% with a compression of 5% along the y-axis. On the other hand, the electrical conductivity experiences higher variations, nearly doubling its value from the undeformed case under the semiconductor regime of doping and mechanical deformation. Finally, our predicted power factors can be enhanced by nearly twice under the same conditions by which the electrical conductivity is also improved, indicating that the latter drives the optimisation of the former.

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“…Layered TiS 3 has a similar band gap width to silicon (about 1 eV) and theoretical electronic mobility of up to 10,000 cm 2 V –1 s –1 , making it have great potential as a substitute for silicon . So far, the synthesis of TiS 3 mainly includes chemical vapor transport − (CVT), mechanical exfoliation, and a solution synthesis method. − Due to the long reaction time, the growth of TiS 3 is often conducted in a low-pressure sealed ampoule. Shkvarin et al used titanium disulfide (TiS 2 ) and sulfur (S) as precursors to react in the ampoule for a week, and then the TiS 3 crystal appeared at the medial of the ampoule after cooling down.…”

Section: Introductionmentioning

confidence: 99%

Rapid Solid-Phase Sulfurization Growth and Nonlinear Optical Characterization of Transfer-Free TiS₃ Nanoribbons

et al. 2022

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Quasi-1D titanium trisulfide (TiS3) has strong in-plane anisotropy with a direct band gap of about 1 eV, which has attracted wide attention in the fields of microelectronics and optoelectronics. However, the investigation of in situ synthesis, synthetic mechanism, and nonlinear optical properties of TiS3 is rarely reported. In this work, we developed a transfer-free method to grow TiS3 nanoribbons, successfully reducing the synthesis time from a few days to less than 24 h without pretreatment. Raman spectroscopy revealed TiS3 was not directly synthesized by titanium (Ti) and sulfur (S) but by the further sulfurization reaction of intermediate product TiS2. Moreover, the polarized four-wave mixing (FWM) imaging of the as-grown TiS3 samples was conducted by ultrafast nonlinear optical spectroscopy for the first time, identifying the crystal axis orientation of TiS3 accurately and quickly. Our work not only provides a rapid growth method for transfer-free synthesis of TiS3 nanoribbons on SiO2/Si substrates but also investigate the fast and non-destructive ultrafast nonlinear optical characterization of quasi-1D TiS3, which lays a foundation for understanding the synthetic mechanism and physicochemical properties of transition metal trisulfides (TMTCs) and promoting the functional device applications of TMTCs represented by TiS3.

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Multi-terminal electronic transport in boron nitride encapsulated TiS₃ nanosheets

Cited by 16 publications

References 41 publications

Rich Polymorphism of Layered NbS₃

Rich Polymorphism of Layered NbS₃

Strain engineering of the electronic and thermoelectric properties of titanium trisulphide monolayers

Rapid Solid-Phase Sulfurization Growth and Nonlinear Optical Characterization of Transfer-Free TiS₃ Nanoribbons

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Multi-terminal electronic transport in boron nitride encapsulated TiS3 nanosheets

Cited by 16 publications

References 41 publications

Rich Polymorphism of Layered NbS3

Rich Polymorphism of Layered NbS3

Strain engineering of the electronic and thermoelectric properties of titanium trisulphide monolayers

Rapid Solid-Phase Sulfurization Growth and Nonlinear Optical Characterization of Transfer-Free TiS3 Nanoribbons

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Multi-terminal electronic transport in boron nitride encapsulated TiS₃ nanosheets

Rich Polymorphism of Layered NbS₃

Rich Polymorphism of Layered NbS₃

Rapid Solid-Phase Sulfurization Growth and Nonlinear Optical Characterization of Transfer-Free TiS₃ Nanoribbons