Multi‐scale domain structure observation and piezoelectric responses for [001]‐oriented PMN‐33PT single crystal

Abstract

Multiple phase coexistence contributes to the extraordinary piezoelectric behavior of (1‐x)Pb(Mg1/3Nb2/3)O3–xPbTiO3 (PMN–xPT) near the morphotropic phase boundaries (MPBs). By incorporating an optical path of crossed polarized light (PLM) into the commercialized Piezoelectric Force Microscope (PFM) (named as PLM‐PFM system), in situ domain structure observation from micro‐ to nanoscale, as well as measurement of the piezoelectric behavior for individual domains can be realized. For [001]‐oriented single crystal of 67Pb(Mg1/3Nb2/3)O3‐33PbTiO3 (PMN‐33PT), fine domain boundary structures of rhombohedral (R), tetragonal (T), and monoclinic (M) phases are revealed. Measurements of the electric field‐induced displacement as a function of the applied DC electric field (VDC) are performed for domains with different polarization vectors. Values for the electric field‐induced displacement are in descending order for c‐domains of the M, R, and T phases. For an individual phase of T or M, the displacement increases when the angle between the polarization vector and the applied electric field decreases. The multi‐scale perspective of the domain structures and the corresponding piezoelectric response helps in understanding the ultra‐high piezoelectric performance for PMN‐PT single crystals near MPB.

Coexistence of local structural heterogeneities and long-range ferroelectricity in Pb-free (1-x)Ba(Zr0.2Ti0.8)O3-x(Ba0.7Ca0.3)TiO3 ceramics

“…Fig. 5 (d) shows the hierarchical domain configuration and is similar to the earlier reports resulting due to the interplay of stress accommodation and polarization compensation [49][50][51][52]. Fig.…”

Coexistence of local structural heterogeneities and long-range ferroelectricity in Pb-free (1−x)Ba(Zr0.2Ti0.8)Dey1, Ahad2, Gautam3 et al. 2021Phys. Rev. B19010View full textAdd to dashboardCite

“…. Figure 5(d) shows the hierarchical domain configuration and is similar to the earlier reports resulting from the interplay of stress accommodation and polarization compensation [49][50][51][52]. Figure 5(e) shows the piezoelectric amplitude hysteresis loop which was obtained by applying electric field along the tip axis on the selected region.…”

Sm and Mn doped enhancing the electrical properties of .68PMN–.32PT relaxor ferroelectric thin films

“…Over the past several decades, relaxor ferroelectric materials (1− x )Pb(Mg 1/3 Nb 2/3 )O 3 – x PbTiO 3 (PMN–PT) have attracted tremendous attention owing to their unique electrical properties near the morphotropic phase boundary (MPB) 4–6 . The MPB region of PMN–PT is in the composition range of .30–.39 for x , where the materials involve complex multiphase structures including the monoclinic, tetragonal, rhombohedral, and orthorhombic phases 7–10 . The defects in the preparation of PMN–PT films are the leading cause of electric leakage and reduce the electrical properties of the films 2,11,12 …”

“…[4][5][6] The MPB region of PMN-PT is in the composition range of .30-.39 for x, where the materials involve complex multiphase structures including the monoclinic, tetragonal, rhombohedral, and orthorhombic phases. [7][8][9][10] The defects in the preparation of PMN-PT films are the leading cause of electric leakage and reduce the electrical properties of the films. 2,11,12 Element doped is one of the most effective ways to reduce oxygen vacancy generation and improve electrical properties, which can be divided into soft and hard doped.…”