Abstract:Abstract-We report a modeling study of a conceptual non-volatile memory cell based on inorganic molecular clusters as a storage media embedded in the gate dielectric of a MOSFET. For the purpose of this study we have developed a multi-scale simulation framework that enables the evaluation of the variability in the programming window of a flash-cell with sub-20nm gate length. Furthermore, we have studied the threshold voltage statistical variability due to the presence of random dopant fluctuations and polyoxom… Show more
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