Multi-objective particle swarm optimization on ultra-thin silicon solar cells

Atalay, Ipek Anil; Gunes, Hasan Alper; Alpkilic, Ahmet Mesut; Kurt, Hamza

doi:10.1007/s12596-020-00653-z

Cited by 1 publication

(1 citation statement)

References 25 publications

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“…The single-pass absorption is assuming perfect antireflection but no light trapping [23]. That is, the normal incident light passes through the semiconductor material only once.…”

Section: Modelling Simulation and Methods Usedmentioning

confidence: 99%

Ultra-precision trapezoidal grating mixture of photonic crystal’s effect on enhancing the optoelectronic properties of thin film GaAs solar cell

Sadoun¹,

Mouetsi²,

Hocini³

2021

Phys. Scr.

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The IV semiconductor materials have a pivotal role in photovoltaic (PV) systems. Research on the optimal grating structure has attracted a lot of interest because of its potential application in light-trapping in thin film PV cells. The Photonic Crystals (PCs) with their nano-engineered feature which allowed them to obtain high efficiency solar cells in particular from a parametric aspect. By using the Rigorous Coupled Wave Analysis (RCWA) method by RSoft CAD software, a Gallium arsenide (GaAs) thin film is studied with a simple trapezoidal grating of PCs to improve optical absorption with height, width and the mixed ultra-precision grating variations taking into account the J-V solar cell characteristics. According to our simulation results and compared to the planar grating, an enhancement in the power conversion efficiency (η) of 53.72% with a one dimensional PCs grating, and a 115.36% improvement with a simple trapezoidal grating. Furthermore, by mixing the ultra-precision values of the gratings we have an enhancement of 147.25% in height variation and 151.04% in width variation, with a noticeable improvement in the width effect compared to the height that reached up to 58.22%.

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“…The single-pass absorption is assuming perfect antireflection but no light trapping [23]. That is, the normal incident light passes through the semiconductor material only once.…”

Section: Modelling Simulation and Methods Usedmentioning

confidence: 99%