Multi-Objective Optimization of the Gate Driver Parameters in a SiC-Based DC-DC Converter for Electric Vehicles

Abstract

DC-DC converters are being used for power management and battery charging in electric vehicles (EVs). To further the role of EVs in the market, more efficient power electronic converters are needed. Wide band gap (WBG) devices such as silicon carbide (SiC) provide higher frequency and lower power loss, however, their high di/dt and dv/dt transients result in higher electromagnetic interference (EMI). On the other hand, some gate driver parameters such as gate resistor () have a contradictory effect on efficiency () and EMI. The idea of this paper is to investigate the values of these parameters using a multi-objective optimization method to optimize and EMI at the same time. To this aim, first, the effect of high and low side on and EMI in the half-bridge configuration is studied. Then, the objective functions of the optimization problem are obtained using a numerical regression method on the basis of the experimental tests. Then, the values of the gate resistors are obtained by solving the multi-objective optimization problem. Finally, and EMI of the converter in the optimum gate resistor design are compared to those in the conventional design to validate the effectiveness of the proposed design approach.

Influence of JFET Width on Short-Circuit Robustness of 1200 V SiC Power MOSFETs

“…This knowledge is crucial for designing reliable power electronic systems that utilize SiC MOSFETs and ensuring their safe operation under various fault conditions. The short-circuit performance of SiC MOSFET power modules under various operating conditions has also been studied [6,7]. Compared to Si IGBTs, the short-circuit withstand time (SCWT) of SiC MOSFETs is 80% As shown in Figure 1, the JFET width (W JFET ) is one of the key structural parameters for SiC MOSFETs, which significantly affects both device performance and reliability.…”

Investigating the Shielding Effect of Pulse Transformer Operation in Isolated Gate Drivers for SiC MOSFETs

“…Favorable high switching frequency attainment becomes conflicting and challenging when resulting in high switching transitions dv/dt, amounting to 100 kV/µs, provoking electromagnetic disturbances in gate driver circuits due to parasitic capacitances and inductances [13]. Hence, to profit from the encouraging advancements while inspecting the demerits, printed circuit board (PCB)-integrated gate driver technology for WBG device technology has been explored [14].…”

Constant-Current Gate Driver for GaN HEMTs Applied to Resonant Power Conversion

“…Nowadays, cost reduction in SiC technology [2] together with the development of high-voltage GaN devices are fostering innovation in this field. However, driving these devices in an efficient and safe way is still a significant challenge [5][6][7]. This paper focuses on the design and implementation of a new gate driver circuit for high-voltage GaN devices.…”