Multi-material gate poly-crystalline thin film transistors: Modeling and simulation for an improved gate transport efficiency

A new strained Si MOSFET structure with hetero-polycrystalline SiGe gate was studied, which combines the advantages of “gate engineering” and “strain engineering”. The new structure improved the carrier transport efficiency, suppressed the short-channel effects (SCE), and enhanced the performance on the basis of strain. Then a physically modeling strategy such as quasi-2D surface potential of strong inversion, threshold voltage, and channel current was presented for the strained Si NMOSFET. Finally, the above model was computed and the results were analyzed.

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Multi-material gate poly-crystalline thin film transistors: Modeling and simulation for an improved gate transport efficiency

Cited by 3 publications

References 24 publications

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Study on physical model for strained Si MOSFET with hetero-polycrystalline SiGe gate

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