Multi-gigabit E-band wireless data transmission

Boes, F.; Antes, J.; Messinger, T.; Meier, Dirk; Henneberger, R.; Tessmann, A.; Kallfass, Ingmar

doi:10.1109/mwsym.2015.7166930

Cited by 20 publications

(5 citation statements)

References 14 publications

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“…For a transceiver communication system, maximum achievable data rate requires minimum distortion of its Radio Frequency (RF) transfer characteristics [7]. The E-band offers reasonable wideband frequency capability to reach the high gigabit rate required in wireless transmission systems [8]. The frequency band 71 GHz to 76 GHz is allocated for several applications by the International Telecommunication Union (ITU) and The European Telecommunication Standards Institute (ETSI) [9].…”

Section: Introductionmentioning

confidence: 99%

Design of Chebyshev Bandpass Waveguide Filter for E-band Based on CSRR Metamaterial

M¹,

Ugur²

2021

Int J Electron Device Phys

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A new design of bandpass waveguide filter with Chebyshev response which operates in the E-band for downlink channel [71 GHz-76 GHz] at 73.5 GHz center frequency. The new design used a complementary split ring resonators (CSRRs) upper and lower rings that are placed on the same transverse plane. A simple model of lumped elements circuit (RLC) model is shown. The model of the proposed bandpass waveguide filter is synthesized and designed by using EM full-wave simulator CST. By selecting proper physical dimensions of CSRR design, a shortened physical length, a flat and lossless passband with better return loss over the conventional waveguide filter are obtained. As a result, the proposed filter is compared with the conventional bandpass waveguide filter coupled by inductive H-plane irises at the same resonant frequency 73.5 GHz. The proposed filter reduces the overall physical length by 37.5% and enhances the return loss up to 6.7%.

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Section: Introductionmentioning

confidence: 99%

Design of Chebyshev Bandpass Waveguide Filter for E-band Based on CSRR Metamaterial

M¹,

Ugur²

2021

Int J Electron Device Phys

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“…Scaling of CMOS devices below 32 nm has been shown to provide several advantages for digital circuit designers. Transistors operating above 300 GHz are now everywhere, opening opportunities for a multitude of power-sensitive applications in the 60 to 100 GHz range [77], [78], [79]. Breakdown voltage reductions, as discussed earlier, have a large impact on performance.…”

Section: Millimeter-wave Dacsmentioning

confidence: 99%

SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers

2023

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Innovation and evolution are paramount where the demand for wideband, data-intensive connectivity is ever-increasing, and the only constant is change. Standards that define the operation of next-generation mobile networks are moving away from the traditional radio frequency (RF) spectrum and into millimeter-wave (mm-wave) bands. The physical layer (PHY) for IEEE 802.11ad Wi-Fi and 802.11ay WLANs dictates operation in the unlicensed 60 GHz band. 5G New Radio (NR) applications utilize selected bands from 26 to 39 GHz. Additionally, newly developing Fourth Industrial Revolution (4IR) applications depend on 5G NR as an enabling technology. Satellite communications and wireless backhaul will occur in E-band between 70-86 GHz. Increasing demands from the market cause designers to push boundaries, and the development of standards guide technological advances. Perhaps the most substantial improvements are observed in integrated circuit technology. This article details the major Si processes, namely Complementary Metal Oxide Semiconductor (CMOS) and SiGe Bipolar CMOS (BiCMOS), and their foray into the wireless transceiver space traditionally dominated by GaAs. CMOS and BiCMOS have become popular in many communities because of their low fabrication cost and excellent digital integration capabilities. RF performance has matured to where Si is a serious competitor for tried-and-tested III-V technologies. Some extreme environments and sophisticated applications still favor GaAs and GaN, however. GaAs, for example, can yield unparalleled output power and excellent noise figure performance, albeit at a higher cost and increased design and manufacturing complexity due to the multi-chip nature of these circuits.INDEX TERMS 5G new radio (NR), broadband communication, cellular vehicle-to-everything (C-V2X), CMOS, fourth industrial revolution (4IR), Internet of Things (IoT), millimeter-wave, SiGe BiCMOS.

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“…With growing user demand for extensive multimedia content, communication links are under development at Ka-band and looking towards higher frequencies such as the unlicensed allocations at V-band in the 57-64 GHz and 64-71 GHz bands [3], [4], the 60 GHz WiFi IEEE bands, and the FCC private sector point-to-point links from 71-76, 81-86, and 92-95 GHz. Demonstrated high data rate communication systems operating at 92 GHz and achieving 6.5 Gbps with quadrature amplitude modulation (128-QAM) are shown with GaN frontends [5], and data rates up to 8 Gbps with 16-QAM signals are shown in a 6 m range at 75 GHz wireless link using 100-nm InGaAs mHEMT technology for the LNA and mixer [6]. Additionally, millimeter-wave communications are attractive for fixed satellite services and space exploration missions [7].…”

Section: Introductionmentioning

confidence: 99%

$V$- and $W$-Band Millimeter-Wave GaN MMICs

et al. 2023

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This paper gives an overview of published results with GaN MMICs for millimeter-wave front ends at frequencies above 60 GHz, including power and low-noise amplifiers, switches, phase shifters, frequency multipliers and oscillators. Some design methods and demonstrated experimental results obtained at W band from MMICs fabricated in a 40-nm GaN on 50-μm SiC process are then presented. These include 75 to 110 GHz power amplifiers with 20-27 dBm output power and 10-17 dB gain, switches with 2 dB insertion loss and 20 dB isolation, and continuous phase shifters with 2-11 dB loss and 0 • -90 • of tunable phase shift. Additional MMICs include frequency doublers and triplers, oscillators, circulators and mixers, designed for higher levels of on-chip integration towards a W-band front end.

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Multi-gigabit E-band wireless data transmission

Cited by 20 publications

References 14 publications

Design of Chebyshev Bandpass Waveguide Filter for E-band Based on CSRR Metamaterial

Design of Chebyshev Bandpass Waveguide Filter for E-band Based on CSRR Metamaterial

SiGe and CMOS Technology for State-of-the-Art Millimeter-Wave Transceivers

$V$- and $W$-Band Millimeter-Wave GaN MMICs

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